Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Macronix International Co., Ltd.

Chin-Hsiang Lin

Ching-Yu Chang

Chi-Ming Yang

An-Ren Zi

Ru-Gun Liu

Chen-Yu Liu

Cheng-Han Wu

Heng-Hsin Liu

Yung-Sung Yen

Wei-Liang Lin

Wei-Han Lai

Sey-Ping Sun

Kuei Shun Chen

Chun-Lin Louis Chang

Chien-Wei Wang

Chun-Kuang Chen

Nai-Han Cheng

Clement Hsingjen Wann

Burn Jeng Lin

Tzu-Yang Lin

Jong-I Mou

Chih-Ming Lai

Li-Jui Chen

Ming-Hsi Yeh

Tsai-Sheng Gau

Ya Hui Chang

Shih-Ming Chang

Hsin-Chang Lee

Po-Chung Cheng

Chih-Tsung Shih

Sung-Li Wang

Wen-Chuan Wang

Chyi Shyuan Chern

Kuei-Shun Chen

Teng-Chun Tsai

You-Hua Chou

Ken-Hsien Hsieh

Neng-Kuo Chen

Kuo-Sheng Chuang

Chi-Lun Lu

Tien-I Bao

Shinn-Sheng Yu

Tai-Chun Huang

Shy-Jay Lin

Chia-Jen Chen

Pei-Cheng Hsu

Sheng-Chi Chin

Pinyen Lin

Keng-Chu Lin

Anthony Yen

Chen-Ming Huang

Yun-Yue Lin

Hua-Tai Lin

Chi-Yuan Shih

Chih-Cheng Lin

Chun Hsiung Tsai

Tsung-Lin Lee

Ryan Chia-Jen Chen

Li-Te S Lin

Chih-Hao Chang

Ling-Yen Yeh

Chi-Cheng Hung

Huang-Lin Chao

Ming-Sheng Yang

Hsien-Cheng Wang

Chih-Tsung Lee

Horng-Huei Tseng

Yen-Ming Chen

Chih-Wei Lin

Chih-Chien Liu

Chun-Hung Lin

Pang-Yen Tsai

Chih-Yuan Ting

Chih-Hang Tung

Chien-Hung Lin

Chien-Chih Chen

Chih-Chiang Tu

Tzung-Chi Fu

Sheng-Liang Pan

Jeff J Xu

Chia-Jung Hsu

Chih-Ming Ke

Chen-Nan Yeh

Cheng-Hung Chang

Hung-Jui Kuo

Tze-Liang Lee

Chung-Ju Lee

Chih-Wei Hsu

Shang-Chieh Chien

Ziwei Fang

Jeng-Horng Chen

Chao-Hsiung Wang

Yuan-Te Hou

Ta-Cheng Lien

Han-Lung Chang

Yung-Yao Lee

Chien-An Chen

Chun-Yi Lee

Chia-Hui Lin

Chieh Hsieh

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Photoresist composition and method of manufacturing a semiconductor device

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second fin structures formed over the substrate, and an isolation structure between the first and second fin structures. The isolation structure can include a lower portion and an upper portion. The lower portion of the isolation structure can include a metal-free dielectric material. The upper portion of the isolation structure can include a metallic element and silicon.

Isolation structures of semiconductor devices

A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.

Simultaneous carbon nanotube growth, catalyst removal, boron nitride nanotube shell formation method for EUV pellicles

A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Method of manufacturing a semiconductor device

A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.

Photoresist composition and method of forming photoresist pattern

A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

Adhesion layer for multi-layer photoresist

In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

Method of manufacturing semiconductor devices

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Lithography method for positive tone development

A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C-Ccyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.

Method for forming semiconductor structure

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

Method composition and methods thereof

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Extreme ultraviolet photolithography method with developer composition

An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.

Dummy fin structures and methods of forming same

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Hsin-Chu, Taiwan

Chin-Hsiang Lin