Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Tsinghua University

Chin-Fu Kao

Szu-Wei Lu

Li-Hui Cheng

Chih-Chien Pan

Jing-Cheng Lin

Chih-Hao Chen

Chen-Shien Chen

Jung-Hua Chang

Chen-Hua Douglas Yu

Cheng-Lin Huang

Shang-Yun Hou

Pu Wang

Chih-Yuan Chien

Ying-Ching Shih

Hsien-Pin Hu

Wen-Hsin Wei

Shin-Puu Jeng

Po-Hao Tsai

Chi-Hsi Wu

Jui-Pin Hung

Hsing-Kuo Hsia

Sung-Hui Huang

Kuan-Yu Huang

Li-Chung Kuo

Heh-Chang Huang

Yushun Lin

Hui-Ting Lin

Chih-Chieh Hung

Jian-Yang He

Ming-Da Cheng

Chien-Li Kuo

Cheng-Chieh Hsieh

Yu-Sheng Lin

Yao-Chun Chuang

Tsung-Fu Tsai

Kuo-Ching Hsu

Szu Wei Lu

Chin-Chuan Chang

Yi-Chao Mao

Shih-Ting Lin

Kuang-Chun Lee

Jyun-Lin Wu

Kai Jun Zhan

Wen-Chih Chiou

Chien-Min Lee

Hsien-Wen Liu

Chung Yu Wang

Nai-Wei Liu

Ming-Jinn Tsai

Kung-Chen Yeh

Tsung-Shune Chin

Long Hua Lee

Tsei-Chung Fu

Yi-Lin Tsai

Ping-Yin Hsieh

Tsung-Yang Hsieh

Ying Ching Shih

Shih-Yi Syu

Chun-Hsing Su

Ying-Tz Hung

A package structure includes a substrate, a first die, a second die, a first thermal conductive layer, a heat spreader and a second thermal conductive layer. The first die and the second die are bonded to the substrate. The first thermal conductive layer is inserted between the first die and the second die. The heat spreader is disposed on the substrate to cover the first die and the second die. The second thermal conductive layer is different from the first thermal conductive layer, wherein the second thermal conductive layer is disposed between the first thermal conductive layer and the heat spreader.

Package structures

A method includes attaching a die to a thermal compression bonding (TCB) head through vacuum suction, wherein the die comprises a plurality of conductive pillars, attaching a first substrate to a chuck through vacuum suction, wherein the first substrate comprises a plurality of solder bumps, contacting a first conductive pillar of the plurality of conductive pillars to a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar to the first solder bump results in a first height between a topmost surface of the first conductive pillar and a bottommost surface of the first solder bump, and adhering the first solder bump to the first conductive pillar to form a first joint, wherein adhering the first solder bump to the first conductive pillar comprises heating the TCB head.

Package bonding structures and method of formation

An embodiment interfacial bonding test structure may include a first substrate having a first planar surface, a second substrate having a second planar surface that is parallel to the first planar surface, a first semiconductor die, and a second semiconductor die, each semiconductor die bonded between the first substrate and the second substrate thereby forming a sandwich structure. The first semiconductor die and the second semiconductor die may be bonded to the first surface with a first adhesive and may be bonded to the second surface with a second adhesive. The first semiconductor die and the second semiconductor die may be displaced from one another by a first separation along a direction parallel to the first planar surface and the second planar surface. The second substrate may include a notch having an area that overlaps with an area of the first separation in a plan view.

Test structures to determine integrated circuit bonding energies and methods of making and using the same

A first integrated circuit (IC) die includes a first substrate. A second IC die includes a second substrate. At least one of the first substrate or the second substrate has a first surface orientation. The first IC die is spaced apart from the second IC die. A third die electrically interconnects the first IC die to the second IC die. The third die includes a third substrate having a second surface orientation. The second surface orientation is different from the first surface orientation.

Bridge die having different surface orientation than IC dies interconnected by the bridge die

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Adhesive and thermal interface material on a plurality of dies covered by a lid

An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

Integrated circuit package and method of forming same

A package structure is provided. The package structure includes a substrate, a cover element, a semiconductor device, a protruding element, an adhesive element, and an electrical connector. The cover element is disposed on the substrate and having a recess. The semiconductor device is disposed on the substrate and disposed in the space surrounded by the cover element. The protruding element extends from the substrate and disposed in the recess. The adhesive element is disposed in the recess. The electrical connector is in contact with the substrate and the semiconductor device.

Semiconductor package structure having ring portion with recess for adhesive

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

Metal-bump sidewall protection

A semiconductor package includes a first semiconductor die, an adhesive layer, a second semiconductor die, a plurality of conductive pillars and an encapsulant. The adhesive layer is adhered to the first semiconductor die. The second semiconductor die is stacked over the first semiconductor die. The conductive pillars surround the first semiconductor die. The encapsulant encapsulates the first semiconductor die and the conductive pillars, wherein a top surface of the encapsulant is higher than top surfaces of the conductive pillars.

Semiconductor packages

A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.

Method of forming package structure and package structure therefrom

A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer. The device is disposed on and electrically connected to the circuit substrate. The device includes at least one semiconductor die laterally encapsulated by an insulating encapsulation. The metal layer is covering a back surface of the at least one semiconductor die and the insulating encapsulation. The lid is disposed on the circuit substrate, and the lid is adhered to the metal layer through the thermal interface material layer.

Method of fabricating package structure

A method for forming a package structure is provided. The method includes bonding a package component to a substrate through a plurality of first connectors. The package component comprises a first semiconductor die and a second semiconductor die. The method also includes forming a dam structure over the substrate and surrounding the first connectors. A top surface of the dam structure is lower than a bottom surface of the package component. The method further includes filling an underfill layer in a space between the dam structure and the first connectors. In addition, the method includes removing the dam structure after the underfill layer is formed.

Method for forming package structure

A semiconductor package includes a substrate, a package structure, a lid structure, and a thermal spreader layer. The package structure is disposed on the substrate, wherein the package structure includes a plurality of device dies and a filling material filling a gap between adjacent two of the plurality of device dies. The lid structure is disposed over substrate and covering the package structure. The thermal spreader layer is disposed between the lid structure and the package structure, wherein the thermal spreader layer has a profile that is discontinuous in thickness at a gap region corresponding to the gap.

Semiconductor package and method of manufacturing semiconductor package

A semiconductor device package is provided, including a package substrate, a semiconductor device, a metal lid, and a metal thermal interface material (TIM). The package substrate has a first surface. The semiconductor device is disposed over the first surface of the package substrate. The metal lid is disposed over the semiconductor device and the package substrate. The metal TIM is interposed between the metal lid and the top surface of the semiconductor device for bonding the metal lid and the semiconductor device. A shape of the lateral sidewall of the metal TIM in a longitudinal section is concave arc, and the outermost point of the lateral sidewall is within the boundary of the semiconductor device.

Semiconductor device package having metal thermal interface material

A package structure includes a semiconductor package, a thermal conductive gel, a thermal conductive film and a heat spreader. The thermal conductive gel is disposed over the semiconductor package. The thermal conductive film is disposed over the semiconductor package and the thermal conductive gel. A thermal conductivity of the thermal conductive film is different from a thermal conductivity of the thermal conductive gel. The thermal conductive film is surrounded by the heat spreader.

Growing community of inventors

Taipei, Taiwan

Chin-Fu Kao