United Microelectronics Corp.

Canshow Industrial Co., Ltd.

Chin-Chun Huang

Chen-Bin Lin

Yei-Hsiung Lin

Ji-Fu Kung

Yu-Ju Liu

Jin-Dian Huang

Nick Chao

Chinhung Huang

Lien-Yung Huang

Jin-Shu Huang

Wei-Po Chiu

A vacuum retaining device capable of reuse includes a sucking disk member. The periphery of a disk surface portion of the sucking disk member is formed with a coupling edge portion wrapped and connected with a sealing rim. During use, the coupling edge portion inside the sealing rim forms a support, such that the shape and efficiency of the sealing rim can be kept for a long time. When a sealing surface of the sealing rim is poked to disengage from a surface to be adhered, the sealing surface is able to link the coupling edge portion of the sucking disk body. When the vacuum retaining device is not used, the outer edge of the sealing rim is poked for the air to enter the interior of the sucking disk body. The vacuum retaining device can be detached from the surface easily and conveniently.

Vacuum retaining device capable of reuse

A monitoring testkey for a wafer is provided. The monitoring testkey includes a first metal oxide semiconductor (MOS) transistor having a channel extending in a first direction, a second MOS transistor having a channel extending in a second direction, a common gate pad electrically connected to gate electrodes of the first MOS transistor and the second MOS transistor, a first source pad electrically connected to source electrodes of the first MOS transistor and the second MOS transistor, a first drain pad electrically connected to a drain electrode of the first MOS transistor, and a second drain pad electrically connected to a drain electrode of the second MOS transistor. The monitoring testkey helps to improve the critical dimension uniformity and electrical characteristics uniformity of elements in a wafer.

Monitoring testkey used in semiconductor fabrication

A method of manufacturing metallic interconnects capable of reducing internal stress inside the metallic layer. The method comprises the steps of forming a silicon-rich oxide layer both before and after the formation of a metallic layer. Therefore, the metallic layer is fully enclosed by silicon-rich oxide layers and any direct contact between the metallic layer and any silicon dioxide layer is avoided. Since the quantity of silicon in the silicon-rich oxide layer is much higher than in a silicon dioxide layer, bonds formed between a silicon atom and an oxygen atom in the silicon-rich oxide layer are much stronger. Consequently, the chance for an aluminum atom in the metallic layer to react with an oxygen atom in the silicon-rich oxide layer is greatly reduced. Hence, lattice vacancies/voids that can lead to conventional stress migration and thermal induced migration problems are prevented.

Method of manufacturing metallic interconnect

A method of fabricating a MOS transistor. An undoped multi-layer stacked polysilicon structure is formed on a gate oxide layer and then being doped to increase conductivity. After that, the multi-layer stacked polysilicon structure and the gate oxide layer are patterned to form a gate electrode. A source/drain region is formed by ion implantation with the gate electrode as a mask.

Method of fabricating metal-oxide semiconductor transistor

Growing community of inventors

Taichung, Taiwan

Chin-Chun Huang