Industrial Technology Research Institute

Chin-Ching Lin

Mei-Ching Chiang

Jen-You Chu

Yi-Ping Chen

Yu-Chun Chen

Hsiang-Chuan Chen

Yi-Chen Chen

Pei-Chen Chuang

Shur-Fen Liu

Chia-Hsin Lin

Jinn-Shing King

Syh-Yuh Cheng

Jeng-Yu Tsai

Pao-Tang Chung

Wen-Ching Sun

Jhy-Long Jeng

En-Kuang Wang

Pei-Hsin Yang

Hung-Chou Liao

The disclosure provides an infrared absorption material, a method for fabricating the same, and a thermal isolation structure employing the same. The infrared absorption material includes a tungsten bronze complex having a formula of MMWO, wherein 0.6&#x2266;x&#x2266;0.8, 0.2&#x2266;y&#x2266;0.33, 0.8&#x2266;x+y&#x3c;1, and 2&#x2266;z&#x2266;3; Mis Li, or Na; and, Mis K, Rb, or Cs. In particular, the tungsten bronze complex consists of a cubic tungsten bronze (CTB) and a hexagonal tungsten bronze (HTB).

Infrared absorption material, method for fabricating the same, and thermal isolation structure employing the same

A polyimide copolymer represented by formula (I) or formula (II) is provided.  In formula (I) or formula (II), B is a cycloaliphatic group or aromatic group, A is an aromatic group, R is hydrogen or phenyl, and m and n are 20-50. The invention also provides a method for fabricating a patterned metal oxide layer.

Polyimide copolymers and method for fabricating patterned metal oxide layers

The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate.

Patterning process for oxide film

The invention provides a multilayered infrared light reflective structure. The multilayered infrared light reflective structure includes a transparent substrate. A doped oxide film is disposed on the transparent substrate. An oxide isolated layer is disposed on the doped oxide film, thereby allowing incident light to be incident from a top surface of the transparent substrate into the multilayered infrared light reflective structure.

Multilayered infrared light reflective structure

A solar cell device is provided, including a transparent substrate, a transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the transparent conductive layer includes lithium and fluorine-co-doped tin oxides, and the lithium and fluorine-co-doped tin oxides includes a plurality of polyhedron grains, and the polyhedron grains have a polyhedron grain distribution density of 60-95%.

Solar cell device

A solar cell device is provided, including a transparent substrate, a transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the transparent conductive layer includes lithium and fluorine-co-doped tin oxides, and the lithium and fluorine-co-doped tin oxides have a lithium doping concentration of about 0.2&#x2dc;2.3% and a fluorine doping concentration of about 0.1&#x2dc;2.5%.

Solar cell device and method for fabricating the same

A chlorine, fluorine and lithium co-doped transparent conductive film is provided, including chlorine, fluorine and lithium co-doped tin oxides, wherein the chlorine, fluorine and lithium co-doped tin oxides have a chlorine ion doping concentration not greater than 5 atom %, a fluorine ion doping concentration not greater than 5 atom %, and a lithium ion doping concentration not greater than 5 atom %.

Growing community of inventors

Taichung, Taiwan

Chin-Ching Lin