Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Taiwan Tft Lcd Association

Tpo Displays Corporation

Tpo Dispalys Corp.

Chin-Chih Yu

Shin-Chuan Chiang

Hsiang-Yuan Cheng

Shih-Hsiang Lai

Bor-Chuan Chuang

Fang-Chen Luo

Shuo-Wei Liang

Chao-Nan Chen

A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.

Method for fabricating thin film transistor

A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Thin film transistor with semiconductor precursor and liquid crystal display having the same

A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Method of fabricating active layer of thin film transistor

Growing community of inventors

Hsinchu, Taiwan

Chin-Chih Yu