Martin Marietta Energy Systems, Inc.

Ut-battelle, Inc.

Bwxt Y-12, LLC

Chin-Chi Tsai

Marvin S Morrow

John Whealton

Donald E Schechter

C Christopher Klepper

John Niemel

Robert C Hazelton

Lee A Berry

Halsey H Haselton

Steven M Gorbatkin

A spark plug device includes a structure for modification of an arc, the modification including arc rotation. The spark plug can be used in a combustion engine to reduce emissions and/or improve fuel economy. A method for operating a spark plug and a combustion engine having the spark plug device includes the step of modifying an arc, the modifying including rotating the arc.

Rotating arc spark plug

Boron powders are sintered and densified utilizing a microwave environment for so doing.

Microwave processing of pressed boron powders for use as cathodes in vacuum arc sources

In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Coupled microwave ECR and radio-frequency plasma source for plasma

A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.

Plasma generating apparatus for large area plasma processing

Growing community of inventors

Oak Ridge, TN, United States of America

Chin-Chi Tsai