Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi, Ltd.

Murata Manufacturing Co., Ltd.

Chiko Yorita

Yuji Shirai

Yu Hasegawa

Yasuo Osone

Kenya Kawano

Seiichi Tomoi

Hirokazu Nakajima

Akira Goto

Takayuki Ono

Naotaka Tanaka

Hiroyuki Doi

Hiroyuki Nagai

Naoki Matsushima

Norihito Yanagita

Yoshihide Yamaguchi

Hiroshi Okabe

Nobuhiro Kinoshita

Chushiro Kusano

Tomoyuki Seino

Toshiaki Takai

Satoru Konishi

Jumpei Konno

Shizuki Nakajima

Hanae Hata

Tsutomu Sakamoto

Masato Nakamura

Akira Soeda

Shinichirou Tooya

Mitsuru Takahira

Yuuichi Sekino

Yoshimasa Tashiro

Tsuneo Endou

An electrode connected to a TH pad requiring electric conduction is formed on a bonded surface of a first multilayer substrate having piercing TH to form a solder bump on the electrode. An electrode connected to the TH pad is formed on a bonded surface of a second multilayer substrate to be bonded having a piercing TH at a position opposite the electrode formed on the first multilayer substrate to form a solder bump on the electrode. A three-layered sheet is formed by applying an adhesive as a resin material that is not completely cured to both surfaces of a core material as the cured resin, and has holes at positions corresponding to the TH and the solder bump, respectively. The first and the second multilayer substrates are then laminated having the bonded surfaces facing each other while having the three-layered sheet positioned and interposed therebetween, and batch thermocompression bonded.

Method of manufacturing an interlayer connection substrate

A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure COin a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

Shielded electronic components and method of manufacturing the same

In a method of manufacturing a semiconductor device, a second wiring substrate is stacked over a first wiring substrate using a conductive paste, where each wiring substrate has mounted thereon an electronic component. The conductive paste is hardened to form a metal column which forms an electrical connection between the first wiring substrate and the second wiring substrate. The wiring substrates are sealed with a resin. The semiconductor device can be downsized, thinned, and made highly reliable, and its manufacturing cost can be reduced. By using conductive paste for the electrical connection between the wiring substrates, a connecting pitch can be smaller than that in a connecting method of using a solder ball including Cu core, and a connection at low temperature can be achieved. Also, by coating the conductive paste by a print-coating or dispense-coating method, manufacturing is simplified and the manufacturing cost is reduced.

Semiconductor device and method of manufacturing the same

In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.

Semiconductor device and manufacturing method thereof

In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn&#x2014;In based alloy sandwiched between the electrodes, and Sn&#x2014;Cu&#x2014;Ni intermetallic compounds are dispersed in the solder layer.

Semiconductor device and manufacturing method of the same

The present invention provides a semiconductor radioactive ray detector having the excellent energy resolution or time precision, a radioactive detection module, and a nuclear medicine diagnosis apparatus. The semiconductor radioactive ray detector has a structure in which plate-like elements made of cadmium telluride and conductive members are alternately laminated and the plate-like element made of cadmium telluride and the conductive member are adhered to each other with a conductive adhesive agent, and the Young's modulus of the conductive adhesive agent is in the range from 350 MPa to 1000 MPa, while the conductive members are made from a material with the linear expansion coefficient of the conductive members in the range from 5&#xd7;10/&#xb0; C. to 7&#xd7;10/&#xb0; C.

Semiconductor radioactive ray detector, radioactive ray detection module, and nuclear medicine diagnosis apparatus

Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

Semiconductor device

A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

Acoustic wave filter and manufacturing method of the same

A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.

Growing community of inventors

Fujisawa, Japan

Chiko Yorita