Kabushiki Kaisha Toshiba

Chikashi Takeuchi

Yuji Yamada

Makiko Katano

Ayako Mizuno

Tomoyo Naito

Eri Uemura

Asuka Uchinuno

According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

Impurity analysis device and method

A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Sample contamination method

Growing community of inventors

Yokohama, Japan

Chikashi Takeuchi