Fujitsu Corporation

Fujitsu Quantum Devices Limited

Chikashi Anayama

Makoto Kondo

Akira Furuya

Toshiyuki Tanahashi

Mami Sugano

Hiroshi Sekiguchi

Hajime Shoji

Toru Uchida

Kay Domen

Takehiro Fukushima

Katsumi Sugiura

Haruhisa Soda

Taro Hasegawa

Akito Kuramata

Susumu Yamazaki

Hirohide Kurakake

Kensei Nakao

A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.

Semiconductor photodetection device and fabrication process thereof

A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

Compound semiconductor device manufacturing method

An S -type laser diode includes a p-type cladding layer formed on an active layer such that an inclined surface region thereof has a carrier concentration level of 1&times;10 cm or more, wherein the p-type cladding layer has a thickness of 0.35 &mgr;m or more.

Laser diode and fabrication process thereof

In the S -type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr; , an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr; , an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr; , and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is &thgr; , relationships &thgr; <&thgr; , &thgr; >&thgr; , &thgr; <&thgr; can be satisfied.

Semiconductor laser and method of manufacturing the same

A semiconductor laser having a stepped substrate of group III-V compound semiconductor exposing upper and lower flat planes and a slant plane coupling the upper and lower flat planes, a lower clad layer formed directly on the stepped substrate, an active layer formed directly on the lower clad layer, and an upper clad layer formed directly on the active layer and including a current blocking layer at partial first depth regions. Denoting an angle between a boundary plane, between a region in the upper clad layer along the upper flat plane and a region in the upper clad layer along the slant plane, and the slant plane of the active layer, or an angle between a first virtual plane and the slant plane of the active layer, the first virtual plane being made by extending a boundary plane, between a region in the lower clad layer along the upper flat plane and a region in the lower clad layer along the slant plane, into the upper clad layer, .theta., the angle .theta. at the partial first depth region, on the active layer side, for one of the upper and lower clad layers is different from the angle .theta. for the one clad layer at a second depth region more remote from the active layer than the first depth region.

Semiconductor laser with light emitting slant plane and method of

A semiconductor laser includes a patterned semiconductor substrate including a lower flat plane portion, an upper flat plane portion, and a stripe-shaped slant plane portion connecting the lower flat plane portion and the upper flat plane portion, an active layer formed on the semiconductor substrate, an upper cladding layer formed on the active layer, current blocking layers formed on portions of the cladding layer, the portions respectively corresponding to the lower flat plane portion to the upper flat plane portion; and a current channel region formed on a portion of the upper cladding layer corresponding to the slant plane portion. There are satisfied relations t1&gt;t2 and tan.sup.-1 (2t1/W).ltoreq..theta.+.phi.&lt;90.degree., where t2 is thickness of the flat plane portions of the upper cladding layer, t1 is thickness of the slant plane portion of the upper cladding layer, .theta. is an angle formed between a boundary between the lower flat plane portion and the slant plane portion and a bottom plane of the lower flat plane portion, .phi. is an angle formed between a bottom plane of the slant plane portion and extension of the bottom plane of the lower flat plane portion, and W is width of the stripe of the slant plane portion of the active layer.

Method for forming semiconductor laser emitting light from slant plane

In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.

Stepped substrate semiconductor laser for emitting light at slant portion

A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane whrerein n is a real number of about 1.ltoreq.n, and epitaxially growing the group III-V compound semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.

Semiconductor device and its manufacture utilizing crystal orientation

A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane, wherein is a real number of about 1.ltoreq.n, and epitaxially growing the group III-V compounds semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.

Method of making a semiconductor device utilizing crystal orientation

A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

Stripe laser diode having an improved efficiency for current confinement

The semiconductor laser of the present invention has an active layer in which the output edge is formed into a V-shape or comprises a striped active layer which is present in a pumped region and whose light output edge is transversely bent.

Semiconductor laser

A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.

Magnesium-doping in III-V compound semiconductor

A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.

Growing community of inventors

Kawasaki, Japan

Chikashi Anayama