Micron Technology Incorporated

Ps4 Luxco S.a.r.l.

Longitude Licensing Limited

Elpida Memory, Inc.

Longitude Semiconductor S.a.r.l.

Other

Longitude Semiconductors S.a.r.l.

Chikara Kondo

Chiaki Dono

Naohisa Nishioka

Homare Sato

Tomoyuki Shibata

Seiji Narui

Taihei Shido

Yuan He

Akinori Funahashi

Roman Andreas Royer

Daigo Toyama

Minehiko Uehara

Takehiro Hasegawa

Ryuji Takishita

Kazuhiro Kurihara

Hiroyuki Tanaka

Hideyuki Yoko

Ryota Suzuki

Yoshihito Morishita

Toshio Ninomiya

Seiichi Maruno

Hiromasa Noda

Masayuki M Nakamura

Akira Ide

Shinya Miyazaki

Hyunui Lee

Ryo Fujimaki

Methods for improving timing in memory devices are disclosed. A method may include sampling a data signal according to a clock signal to obtain a data sample; sampling the data signal according to an advanced clock signal to obtain an advanced data sample; and sampling the data signal according to a delayed clock signal to obtain a delayed data sample. The method may also include comparing the data sample with the advanced data sample and the delayed data sample and performing an action based on the comparison. The action may include selecting a data sample, selecting a clock signal and/or adjusting a clock signal. Associated devices and systems are also disclosed.

Self timing training using majority decision mechanism

Disclosed herein is a semiconductor device that includes an access control circuit generating an internal command based on a verification result signal and an external command. The external command indicates at least one of a first command that enables the access control circuit to access a first circuit and a second command that enables the access control circuit not to access the first circuit or enables the access control circuit to maintain a current state of the first circuit. The access control circuit, when the verification result signal indicates a first logic level, generates the internal command based on the external command. The access control circuit, when the verification result signal indicates a second logic level, generates the internal command that corresponds to a second command even if the external command indicates a first command.

Semiconductor device verifying signal supplied from outside

A method for writing a mode register in a semiconductor device, the method includes receiving a mode register command and a mode signal; generating a first mode register setting signal; delaying the first mode register setting signal in a first latency shifter to provide a second mode register setting signal; receiving a data signal in synchronization with the second mode register setting signal; and writing the mode signal to the mode register only if the received data signal has a first logic level.

Semiconductor device having PDA function

Apparatuses, systems, and methods for signal encryption in high bandwidth memory are described. A high bandwidth memory (HBM) may include a mix of secure circuits and non-secure circuits, which are coupled to secure and non-secure registers respectively. Information may be communicated between the secure and non-secure registers along an interface. The information associated with the secure register may be encrypted. When information is written to the secure register, an encryption circuit in the HBM may first decrypt the information before it is written to the secure register. When information is read from the secure register, it may first be encrypted by the encryption circuit before it is provided along the interface.

Apparatuses and methods for signal encryption in high bandwidth memory

Embodiments of the disclosure are drawn to apparatuses, systems, and methods for direct access hybrid testing. A memory device, such as a high bandwidth memory (HBM) may include direct access terminals. During a testing procedure, test instructions may be provided to the memory through the direct access terminals. The test instructions include a data pointer which is associated with one of a plurality of test patterns pre-loaded in the memory and an address. The selected test pattern may be written to, and subsequently read from, the memory cells associated with the address. The read test pattern may be compared to the selected test pattern to generate result information. The test patterns may be loaded to the memory, and the result information may be read out from the memory, in an operational mode different than the operational mode in which the test instructions are provided.

Apparatuses and methods for direct access hybrid testing

Apparatuses, systems, and methods for faster memory access regions. A memory array may have a first bank which has a greater access speed than a second bank. For example the first bank may have a reduced read latency compared to the second bank. The first bank may have structural differences, such as reduced word line and/or reduced global input output (GIO) line length. In some embodiments, the first and second bank may have separate bank pad data buses, and data terminals. In some embodiments, they may share the bank pads data bus, and data terminals. In some embodiments, when an access command is received for the first (faster) bank while an access command to the second (slower) bank is still processing, the access to the faster bank may interrupt the access to the slower bank.

Apparatuses including memory regions having different access speeds and methods for using the same

Apparatuses, systems, and methods for fuse based device identification. A device may include a number of fuses which are used to encode permanent information on the device. The device may receive an identification request, and may generate an identification number based on the states of at least a portion of the fuses. For example, the device may include a hash generator, which may generate the identification number by using the fuse information as a seed for a hash algorithm.

Apparatuses, systems, and methods for fuse array based device identification

Disclosed herein is an apparatus that includes a first semiconductor chip including a memory cell array having a volatile memory cell and an access control circuit configured to perform a refresh operation on the volatile memory cell, and a second semiconductor chip including a power generator configured to supply a first power supply voltage to the first semiconductor chip. The access control circuit is configured to activate a first enable signal during the refresh operation. The second semiconductor chip is configured to change a capability of the power generator based on the first enable signal.

Apparatus for supplying power supply voltage to semiconductor chip including volatile memory cell

Apparatuses and methods of sharing error correction memory on an interface chip are described. An example apparatus includes: at least one memory chip having a plurality of first memory cells and an interface chip coupled to the at least one memory chip and having a control circuit and a storage area. The control circuit detects one or more defective memory cells of the first memory cells of the at least one memory chip. The control circuit further stores first defective address information of the one or more defective memory cells of the first memory cells into the storage area. The interface chip responds to the first defective address information and an access request to access the storage area in place of the at least one memory chip when the access request has been provided with respect to the one or more defective memory cells of the first memory cells.

Shared error detection and correction memory

Apparatuses and methods of data communication between semiconductor chips are described. An example apparatus includes: a first semiconductor chip and a second semiconductor chips that are stacked with each other via through substrate vias (TSVs) provided in one of the first semiconductor chip and the second semiconductor chip. The first semiconductor chip and the second semiconductor chips communicate with each other by use of data bus inversion data that have been encoded using a DBI algorithm.

Semiconductor layered device with data bus

Growing community of inventors

Tokyo, Japan

Chikara Kondo