Hitachi, Ltd.

Other

Chikako Imura

Masachika Masuda

Kunihiro Tsubosaki

Akihiko Iwaya

Toshihiro Shiotsuki

Satoshi Nakamura

Hideo Miura

Atsushi Nakamura

Akihiro Yaguchi

Naotaka Tanaka

Ryuji Kohno

Junichi Arita

Takeshi Terasaki

Kiyomi Kojima

The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

Method of fabricating a semiconductor device

A method is provided for forming a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form a depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

Method of fabricating a lead-on-chip (LOC) semiconductor device

A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.

TSOP type semiconductor device

The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form a depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

Lead on chip semiconductor device and method of fabricating the same

Growing community of inventors

Higashiyamoto, Japan

Chikako Imura