Atheros Communications, Inc.

Qualcomm Incorporated

Chik Patrick Yue

David Kuochieh Su

William John McFarland

David J Weber

Siu-Weng Simon Wong

Masound Zargari

Masoud Zargari

A method for producing an on-chip signal transforming device. The method includes providing a substrate, and laying a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors. The method then includes laying a second conductive layer above the substrate, wherein the second conductive layer has at least one inductor.

Integrated balun and transformer structures

The present invention provides a synthesizer having an efficient lock detect signal generator, an extended range VCO that can operate within any one of a plurality of adjacent characteristic curves defined by a plurality of adjacent regions, and a divide circuit implemented using only a single counter along with a decoder. This allows for a method of operating the synthesizer, methods of establishing or reestablishing a lock condition using the extended range VCO, and a method of designing a plurality of divide circuits which each use the same single counter and each use a different decoder.

Synthesizer with lock detector, lock algorithm, extended range VCO, and a simplified dual modulus divider

An on-chip signal transforming device includes a substrate and a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors. The device further includes a second conductive layer above the substrate, wherein the second conductive layer has at least one inductor.

An ESD protection circuit uses an inductor to create an electromagnetic resonance in conjunction with the load capacitance of a conventional ESD device. By properly tuning the resonance of this combination, the protective properties of the ESD device can be maintained while minimizing its capacitive load on the main circuit. The inductor can be interposed in various series configurations with the ESD device between the main circuit and a voltage rail; alternatively, the inductor can be connected in various configurations in parallel with the ESD device. The inductor may be implemented as an on-chip inductor using conventional IC fabrication technologies, or may be implemented using IC chip bonding wires as inductors.

System for providing electrostatic discharge protection for high-speed integrated circuits

A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a top metal layer above all other metal layers and the power and ground planes are on a bottom metal layer below all other metal layers. The top and bottom metal layers are separated by a shield that extends beyond the RF signal lines by a distance that is at least the same distance that the shield is away from the RF lines. Low frequency signals are on signal lines below the top metal layer.

Growing community of inventors

Milpitas, CA, United States of America

Chik Patrick Yue