Motorola Corporation

Advanced Micro Devices Corporation

Chii-Chang Lee

Hisao Kawasaki

Johnson O Olowolafe

The uniformity of the thickness of a deposition layer, generated by a chemical vapor deposition (CVD) process, on a semiconductor wafer is enhanced by providing an undercoating on the deposition chamber. The undercoating is formed at a deposition rate significantly faster than the deposition rate of the material on the wafer. A thin precoat is typically formed over the undercoating. Another method of providing uniformity of thickness includes altering the temperature of the wafer or a series of wafers to alter the deposition rate. The alteration of the temperature of the wafer may include the use of a temperature ramp which increases or decreases the deposition temperature between two or more wafers in a series of wafers.

Method of manufacturing a semiconductor device with improved control of

A method for removing particles (21-24) begins by providing a substrate (10). The substrate (10) contains one or more integrated circuit layers (12) having a top surface (12A). The particles (21-24) are in contact with top surface (12A). A tape (14) comprising an adhesion layer (16) and a carrier film (18) is applied to the surface (12A) such that the adhesion layer (16) is in contact with the particles (21-24). The tape (14) is then removed from the surface (12A) wherein the adhesion layer (16) is able to remove the particles (21-24) from the surface (12A) of the substrate (10). The tape (14) can be applied to a front or active surface of a semiconductor wafer, where the surface either has a topography containing high areas (37) and low areas (39) or has a planarized surface (12A) in order to reduce a total number of particles (21-24) on the surface (12A).

Method for removing sub-micron particles from a semiconductor wafer

An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.

Al-Ni-Cr conductive layer for semiconductor devices

The embodiments of the present invention allow the formation of interconnect and vias without forming via veils or excessive thinning of vias. Conductive members (52, 54, 56, 58) are formed with a pattern generally corresponding to the shape of interconnects. A lower intermetallic insulating layer (70)is deposited over the substrate (30) and removed over conductive members (52, 54, 56, 58) before forming via portions. Via portions are formed from the conductive members (52, 54, 56, 58). An upper intermetallic insulating layer (134) is formed and planarized to fill locations overlying the interconnect portions of the conductive members (52, 54, 56, 58) near the vias.

Process for forming a semiconductor device including conductive members

Semiconductor devices having improved electromigration resistance in their connections through dielectric layers are described. Where a conductive metal line overlies a dielectric layer and makes contact to a lower conductive structure through the dielectric layer by virtue of a conductive member, such as a tungsten plug or metal contact, the conductive metal line is provided with an end portion not otherwise connected to a conductive structure. The end portion serves as a reservoir of extra conductive material supplying the conductive metal line as the line is depleted through stress migration and/or electromigration.

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Austin, TX, United States of America

Chii-Chang Lee