National Central University

Delta Electronics, Inc.

Industrial Technology Research Institute

National Applied Research Laboratories

Chii-Chang Chen

Chia-Hua Chan

Shih-Peng Chen

Huang-Kun Chen

Horng-Jou Wang

Cheng-Yi Liu

Ching-Liang Lin

Hung-Yin Tsai

Ching-Yi Chen

Jenq-Yang Chang

Ren-Young Liu

Shih-Shou Lo

Chia-Jen Ting

Chun-Fa Lan

Ya-Lun Tsai

Chao-Yi Tai

Sheng Hsiung Chang

Hua-Kung Chiu

Shih-Shian Ho

Hung-Ta Chien

Chia-Hung Hou

Pi-Gang Luan

Tsing-Jen Chen

An optical fiber apparatus and a method of recovering radiation-induced-attenuation (RIA) onto a rare-earth-doped optical fiber under irradiation are provided in this disclosure. A light source is coupled to a rare-earth doped optical fiber. The light source emits a combination of mode locked pulsed light and non-mode locked quasi-continuous-wave light. The mode locked pulsed light are used to recover RIA onto the rare-earth doped optical fiber in real time, and the non-mode locked light are used to pump the rare-earth doped optical fiber as a gain medium. Each pulsed duration of the mode locked pulsed light is much shorter than operation duration of the non-mode locked light, such that an instantaneous power of the mode locked pulsed light exceeds a saturated pumping power required for the rare-earth doped optical fiber, so as to effectively elevate the core temperature of rare-earth doped fiber to achieve a confined photo-annealed recovery of RIA onto rare-earth doped fibers.

Recovering a rare-earth-doped optical fiber under irradiation

A method for preparing patterned substrate by using nano- or micro-particles is disclosed, which comprises the following steps: (A) providing a substrate with a photoresist layer formed thereon; (B) coating a surface of the photoresist layer with plural nano- or micro-particles, to form a particle layer; (C) exposing and developing the photoresist layer to obtain a patterned photoresist layer; and (D) removing the particle layer. In addition, after the particle layer is removed, the method of the present invention further comprises: (E1) using the patterned photoresist layer as an etching template to etch the substrate; and (E2) removing the patterned photoresist layer to obtain a patterned substrate with plural cavities formed thereon.

Method for preparing patterned substrate by using nano- or micro- particles

A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Light-emitting diode apparatus and manufacturing method thereof

A method for fabricating a distributed Bragg reflector waveguide is disclosed, which includes forming a first distributed Bragg reflector on a substrate; forming a sacrificial pattern on the first distributed Bragg reflector; forming a second distributed Bragg reflector on the sacrificial pattern and the first distributed Bragg reflector; and removing the sacrificial pattern. A distributed Bragg reflector waveguide is also disclosed.

Method for fabricating distributed Bragg reflector waveguide

A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.

Method of fabricating hollow waveguide having cyclic geometric structure

A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film

A semiconductor hollow optical waveguide (SHOW-ODR) device. The semiconductor hollow optical waveguide device comprises a bottom substrate having a trench within, a first omni-directional reflector conformal located on the bottom substrate, and a top substrate having a second omni-directional reflector and located on the bottom substrate with the second omni-directional reflector in contact with the first omni-directional reflector. In addition, a portion of the first omni-directional reflector in the trench and a portion of the second omni-directional reflector over the trench together form an air channel.

Hollow optical waveguide by omni-directional reflectors

An optical device having a photonic crystal structure is provided. The photonic crystal structure includes a plurality of rods/holes, a plurality of light input ports, a plurality of light output ports, a light path; and a defect of rod/hole located in the light path. The photonic crystal structure of the optical device can be optimized to adjust the powers of the lights of the output ports, and thus the output powers having identical intensities can also be achieved. When a plurality of lights is launched via the input ports, the powers and the phases of the lights of the output ports can also be optimized.

Beamsplitter utilizing a periodic dielectric structure

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Pingzhen, Taiwan

Chii-Chang Chen