Shenzhen China Star Optoelectronics Technology Co., Ltd.

Other

Tcl China Star Optoelectronics Technology Co., Ltd.

Chihyuan Tseng

Xiaowen Lv

Wenhui Li

Hejing Zhang

Chihyu Su

Longqiang Shi

Shimin Ge

Yutong Hu

Changcheng Lo

A structure of an oxide thin film transistor includes: an oxide semiconducting layer, an etching stopper layer on the oxide semiconducting layer, and a source and a drain on the etching stopper layer. Two vias are formed in the etching stopper layer. The oxide semiconducting layer includes two recesses formed therein to extend through a skin layer of the oxide semiconducting layer and respectively corresponding to the two vias. The two recesses are respectively connected with and in communication with the two vias. The source and the drain are respectively filled in the two vias and the two recesses connected with the two vias to directly connect to and physically contact the oxide semiconducting layer.

Structure of oxide thin film transistor

The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin film transistor comprises providing a carrier; forming an oxide semiconducting layer (); forming an etching stopper layer (); forming two vias () in the etching stopper layer () to expose the oxide semiconducting layer (); removing a skin layer of the oxide semiconducting layer () in the two vias () to form two recesses () respectively connecting the two vias (); forming a source () and a drain () on the etching stopper layer (), and the source () fills one via () and the recess () connecting therewith, and the drain () fills the other via () and the recess () connecting therewith; performing a post process.

Manufacturing method and structure of oxide thin film transistor

A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.

TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof

A method is provided for manufacturing a thin film transistor (TFT) backplate that includes a switch TFT and a drive TFT. The method is conducted such that each of the switch TFT and the drive TFT manufactured therewith includes a source electrode/a drain electrode and a gate electrode, and also includes an etching stopper layer, a semiconductor layer, and gate isolation layer that are disposed between the source electrode/the drain electrode and the gate electrode to form a TFT structure. The gate isolation layers of the switch TFT and drive TFT are formed of different materials, such as SiOx and AlO, or SiOx and SiNx, or AlOand a mixture of SiNx and SiOx, such that electrical properties of the switch TFT and the drive TFT are made different.

TFT backplate structure and manufacture method thereof

A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.

Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof

A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. An isolation layer with a flat top surface is sandwiched between a transparent electrode and a pixel electrode to form a transparent capacitor.

Pixel structure having high aperture ratio and circuit

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process, and the oxide conductor layer (&#x2032;) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (), the drain () and the top gate () at the same time with one photo process; the method implements patterning process to the passivation layer () and the top gate isolation layer () together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates

A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.

Structure of dual gate oxide semiconductor TFT substrate

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

TFT substrate structure

Provided is a co-planar oxide semiconductor TFT substrate structure, in which an active layer includes a main body and a plurality of short channels connected to the main body and are separated with a plurality of strip metal electrodes to make the active layer possess higher mobility and lower leak current. Also provided is a manufacture method of the co-planar oxide semiconductor TFT substrate structure, in which with the plurality of strip metal electrodes formed between the source and the drain, which are separately positioned, as deposing the oxide semiconductor layer, the plurality of short channels can be formed between the source and the drain. The method is simple and does not require additional mask or process to obtain the active layer structure different from prior art. The manufactured actively layer possesses higher mobility and lower leak current. Thus, the performance of the TFT element can be improved.

Co-planar oxide semiconductor TFT substrate structure and manufacture method thereof

A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

A TFT backplate structure and a manufacture method thereof are provided. The TFT backplate structure includes a switch TFT (T) and a drive TFT (T). The switch TFT (T) is constructed by a first source electrode/a first drain electrode (), a first gate electrode (), and a first etching stopper layer (), a first semiconductor layer (), a first gate isolation layer () sandwiched in between. The drive TFT (T) is constructed by a second source electrode/a second drain electrode (), a second gate electrode (), and a second etching stopper layer (), a second semiconductor layer (), a second gate isolation layer () sandwiched in between. The materials or the thicknesses of the first gate isolation layer () and the second gate isolation layer () are different. Accordingly, the electrical properties of the switch TFT (T) and the drive TFT (T) are different.

The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T) and a drive TFT (T). The switch TFT (T) is constructed by a first source/a first drain (), a first gate (), and a first etching stopper layer (), a first oxide semiconductor layer (), a first gate isolation layer () sandwiched in between. The drive TFT (T) is constructed by a second source/a second drain (), a second gate (), and a second oxide semiconductor layer (), a first etching stopper layer (), a second gate isolation layer () sandwiched in between. The electrical properties of the switch TFT (T) and the drive TFT (T) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process; the method implements the patterning process to the bottom gate isolation layer () and the top gate isolation layer () at the same time with one photo process; the method implements patterning process to the second, third metal layers at the same time to obtain the first source (), the first drain (), the second source (), the second drain (), the first top gate () and the second top gate () with one photo process; the method implements patterning process to the second flat layer (), the passivation layer () and the top gate isolation layer () at the same time with one photo process, to reduce the number of the photo processes to nine for effectively simplifying the manufacture process, raising the production efficiency and lowering the production cost.

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Guangdong, China

Chihyuan Tseng