Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Chihyu Su

Xiaowen Lv

Hejing Zhang

Chihyuan Tseng

Wenhui Li

Longqiang Shi

Shimin Ge

Yutong Hu

Yifan Wang

Yanhong Meng

Wenlin Mei

A structure of an oxide thin film transistor includes: an oxide semiconducting layer, an etching stopper layer on the oxide semiconducting layer, and a source and a drain on the etching stopper layer. Two vias are formed in the etching stopper layer. The oxide semiconducting layer includes two recesses formed therein to extend through a skin layer of the oxide semiconducting layer and respectively corresponding to the two vias. The two recesses are respectively connected with and in communication with the two vias. The source and the drain are respectively filled in the two vias and the two recesses connected with the two vias to directly connect to and physically contact the oxide semiconducting layer.

Structure of oxide thin film transistor

The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin film transistor comprises providing a carrier; forming an oxide semiconducting layer (); forming an etching stopper layer (); forming two vias () in the etching stopper layer () to expose the oxide semiconducting layer (); removing a skin layer of the oxide semiconducting layer () in the two vias () to form two recesses () respectively connecting the two vias (); forming a source () and a drain () on the etching stopper layer (), and the source () fills one via () and the recess () connecting therewith, and the drain () fills the other via () and the recess () connecting therewith; performing a post process.

Manufacturing method and structure of oxide thin film transistor

A thin-film transistor (TFT) array substrate includes a TFT arrangement and a storage capacitor. A gate insulation layer has a portion interposed between two electrode plates of the storage capacitor and thinner than a remaining portion of the gate insulation layer and thus, the thickness of insulation between the electrode plates of the storage capacitor is reduced so that the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved.

Thin-film transistor array substrate and manufacturing method thereof

A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.

TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof

A method is provided for manufacturing a thin film transistor (TFT) backplate that includes a switch TFT and a drive TFT. The method is conducted such that each of the switch TFT and the drive TFT manufactured therewith includes a source electrode/a drain electrode and a gate electrode, and also includes an etching stopper layer, a semiconductor layer, and gate isolation layer that are disposed between the source electrode/the drain electrode and the gate electrode to form a TFT structure. The gate isolation layers of the switch TFT and drive TFT are formed of different materials, such as SiOx and AlO, or SiOx and SiNx, or AlOand a mixture of SiNx and SiOx, such that electrical properties of the switch TFT and the drive TFT are made different.

TFT backplate structure and manufacture method thereof

The present invention provides method for manufacturing a TFT backplane and a structure of a TFT backplane. The method includes (1) forming a gate terminal () and a first metal electrode Mon a substrate (); (2) sequentially forming a gate insulation layer (), a semiconductor layer, and an etch stop layer on the gate terminal (), the first metal electrode M, and the substrate () in a successive manner and applying a photolithographic operation to form an island-like semiconductor layer () and an island-like etch stop layer (); (3) applying a photolithographic operation to patternize the island-like etch stop layer () and the gate insulation layer () to form a plurality of etch stop layer vias () and a gate insulation layer via (); (4) forming source/drain terminals () and a second metal electrode M; (5) forming a passivation protection layer (); (6) forming a planarization layer (); (7) forming a pixel electrode layer (); (8) forming a pixel definition layer (); and (9) forming a spacer pillar ().

Method for manufacturing TFT backplane and structure of TFT backplane

A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.

Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process, and the oxide conductor layer (&#x2032;) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (), the drain () and the top gate () at the same time with one photo process; the method implements patterning process to the passivation layer () and the top gate isolation layer () together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates

The present invention provides a thin-film transistor array substrate and a manufacturing method thereof. In the thin-film transistor array substrate of the present invention, the portion of the gate insulation layer interposed between two electrode plates of the storage capacitor is smaller than that of the remaining portion of the gate insulation layer so that the thickness of the insulation layer of the storage capacitor is reduced and the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved. The manufacturing method of a thin-film transistor array substrate of the present invention provides uses a half tone masking operation and applies two etching operations to have a portion of a gate insulation layer that is located on a first electrode plate of a storage capacitor partially etched so as to reduce the thickness thereof, thereby reducing the thickness of the internal insulation layer of the storage capacitor, whereby the area of the opposite surfaces of the capacitor electrode plates can be reduced under the condition of achieving the same capacitance and thus the aperture ratio is increased.

A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.

Structure of dual gate oxide semiconductor TFT substrate

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

TFT substrate structure

The present invention provides an OLED display device and a manufacture method thereof. By locating a thickness of a part of the second insulative layer correspondingly positioned above the bottom layer wiring in the white sub pixel area is larger than a thickness of other part of the second insulative layer in the white sub pixel area, increase a vertical distance from the bottom layer wiring to the first electrode in the white sub pixel area, and thus, the short circuit, the overcurrent between the first electrode and the bottom layer wiring of the white sub pixel area can be prevented. The manufacture method of the OLED display device is simple, easy for operation, and the manufactured OLED display device can prevent the short circuit or the overcurrent between the first electrode and the bottom layer wiring of the white sub pixel area occur and raise the manufacture yield of the OLED display device.

OLED display device comprising an insulative layer of varying thickness and manufacturing method thereof

A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

A TFT backplate structure and a manufacture method thereof are provided. The TFT backplate structure includes a switch TFT (T) and a drive TFT (T). The switch TFT (T) is constructed by a first source electrode/a first drain electrode (), a first gate electrode (), and a first etching stopper layer (), a first semiconductor layer (), a first gate isolation layer () sandwiched in between. The drive TFT (T) is constructed by a second source electrode/a second drain electrode (), a second gate electrode (), and a second etching stopper layer (), a second semiconductor layer (), a second gate isolation layer () sandwiched in between. The materials or the thicknesses of the first gate isolation layer () and the second gate isolation layer () are different. Accordingly, the electrical properties of the switch TFT (T) and the drive TFT (T) are different.

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Guangdong, China

Chihyu Su