Qualcomm Incorporated

Realtek Semiconductor Inc.

Chihtung Chen

Inyup Kang

Viraphol Chaiyakul

Yi-Te Yeh

I-Chang Wu

Yung-Jen Chen

Te-Ming Kuo

Hsing-Han Tseng

Chia-Hsien Cheng

Huai-Yu Yen

The present disclosure provides a testing method and a testing system. The testing method is performed by at least one processor and includes the following operations: converting a circuit data of a scan test to a program, in which the program is configured to observe an untested part of a circuitry that is unable to be tested in the scan test; generating a waveform data associated with the untested part; generating a look-up table according to the program and a netlist file, in which the netlist file indicates the circuitry; and testing the untested part of the circuitry according to the waveform data and the look-up table.

Testing method and testing system

A testing method is performed by at least one processor and includes following operations: converting first data associated with a scan test into a program, in which the program is configured to observe an untested part of a circuitry that is unable to be tested in the scan test; performing circuit simulations with the program according to a netlist file indicating the circuitry and testing patterns, in order to rank the testing patterns to generate second data; selecting at least one candidate testing pattern from the testing patterns according to the second data; and performing at least one fault simulation on the circuitry according to the netlist file and the at least one candidate testing pattern, in order to test the circuitry.

An N-dimension addressable memory is disclosed. The memory includes an N-dimension array of bit cells and logic configured to address each bit cell using N-Dimension Addressing (NDA), where N is at least two and the array of bit cells is addressable by N orthogonal address spaces. Each bit cell of the N-dimension addressable memory includes a bit storage element, N word lines, and N bit lines.

Concurrent multiple-dimension word-addressable memory architecture

An N-dimension addressable memory. The memory includes an N-dimension array of bit cells and logic configured to address each bit cell using N-Dimension Addressing (NDA), where N is at least two and the array of bit cells is addressable by N orthogonal address spaces. Each bit cell of the N-dimension addressable memory includes a bit storage element, N word lines, and N bit lines.

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San Diego, CA, United States of America

Chihtung Chen