Sumitomo Electric Industries, Limited

Sumitomo Electric Device Innovations, Inc.

Chihoko Mizue

Tomohiro Yoshida

A transistor type of field effect transistor (FET) having a field plate is disclosed. The FET provides an active region and two inactive regions sandwiching the active region therebetween, where the electrodes are provided in the active region. The FET further includes fingers and buses of the drain and the source. The fingers overlap with the electrodes of the drain and the source; while the busses are provided in respective inactive regions. The field plate includes a field plate finger and a field plate interconnection. The field plate finger extends parallel to the gate electrode in a side facing the drain electrode. The field plate interconnection connects the field plate finger with the source interconnection in the inactive region opposite to the inactive region where the drain bus exists.

Semiconductor device having field plate

A vapor phase growth method is disclosed. The method includes a step of preparing a substrate in a chamber, a first step of absorbing only a first element to the substrate by supplying a first source material into the chamber, a second step of suspending supply of the first source material into the chamber, a third step of absorbing a second element to the substrate by supplying a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber, a fourth step of suspending supply of the second source material into the chamber, and a fifth step of repeating from the first step to the fourth step.

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Yokohama, Japan

Chihoko Mizue