Kabushiki Kaisha Toshiba

Chihiro Yoshino

Kazumi Inoh

Yasuhiro Katsumata

Satoshi Matsuda

Hideaki Nii

A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an emitter resistance and restrain an occurrence of an emitter plug effect. Such bipolar transistor can be utilized in a CMOS semiconductor device. In this case, (1) commonly using a process of providing an active base region, a base lead-out electrode and a collector lead-out electrode of the bipolar transistor and a process of providing gate electrodes a MOS field effect transistor, (2) commonly using a process of adding a p-type impurity into the active base region and the base lead-out electrode and a process of executing an ion-implantation for providing high-concentration impurity diffused layers of pMOS transistors, (3) commonly using a process of providing an etching stopper layer and a process of providing side wall insulating films of gate electrodes, and (4) commonly using a silicidation process of the base lead-out electrode and the collector lead-out electrode and a silicidation process of electrodes of MOS transistors. In other embodiment of the bipolar transistor, a single insulating film exist between the base layer and the emitter electrode in the peripheral of the emitter opening. By this construction, the etching stopper film is not necessary resulting in reducing the base resistance.

Semiconductor device

A method for producing a semiconductor device including a bipolar transistor, has the steps of: forming an element isolating region in a major surface of a semiconductor substrate to define an element forming region to form a collector region in the element forming region surrounded by the element isolating region; allowing the epitaxial growth of a semiconductor layer on the major surface of the semiconductor substrate to form a base region of the semiconductor layer on the collector region; forming a growth inhibiting film on a region forming the base region of the semiconductor layer; removing the growth inhibiting film to expose a part of the semiconductor layer; covering the upper surface and side wall of the conductive film, which is exposed in the predetermined region, with an insulator film; covering the side wall of the conductive film, which is exposed in the predetermined region; and forming an emitter region in a surface region of the predetermined region of the semiconductor layer, which is surrounded by the conductive film.

Method for producing semiconductor device, and semiconductor device

To obtain both the highest possible maximum operating frequency f.sub.max and early voltage V.sub.A, a semiconductor device provided with a bipolar transistor including a collector region, a base region formed on the collector region, an emitter region formed in contact with the base region, a base leading electrode connected to the base region, and an emitter electrode connected to the emitter region, is characterized in that a ratio Q.sub.B /N.sub.c of base Gunmel number Q.sub.B to impurity concentration N.sub.C of the collector region of the bipolar transistor lies within a range from 0.2.times.10.sup.-3 cm to 2.5.times..sup.-3 cm.

Semiconductor device having bipolar transistor with unique ratio of base

A method of manufacturing a semiconductor device including selectively forming an element-isolating insulating layer on a surface of a semiconductor substrate to define active regions; forming a first insulating layer and removing respective portions thereof on surfaces of a second conductive type active region and a first active region of a first conductive type; oxidizing to form a gate oxide layer; forming and patterning a conductive layer to form a gate electrodes of MOS transistors and a base-extracting electrode of a bipolar transistor; forming an opening, in the base-extracting electrode, and a side wall insulating layer on an inner wall of the opening; removing first and second portions of the insulating layer to form an overhung portion; epitaxially growing a second conductive type semiconductor layer using the base-extracting electrode and active region of the first conductive type as a seed crystal; and selectively forming a first conductive type semiconductor layer that is to become an emitter that does not contact the base-extracting electrode.

Growing community of inventors

Yokohama, Japan

Chihiro Yoshino