Tokyo Electron Limited

Chihiro Tamura

Kandabara N Tapily

Gerrit J Leusink

Cory Wajda

Kaoru Maekawa

Koji Akiyama

Shintaro Aoyama

Yu Wamura

Ying Trickett

Hirokazu Higashijima

Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

Method of corner rounding and trimming of nanowires by microwave plasma

A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Semiconductor device manufacturing method and substrate treatment system

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Albany, NY, United States of America

Chihiro Tamura