Nec Corporation

Chihiro Ogawa

Yasuaki Hokari

Takashi Sato

Masayuki Furumiya

Keisuke Hatano

Nobukazu Teranishi

Shinichi Kawai

Takao Tamura

Ichiro Murakami

Nobuhiko Mutoh

Michihiro Morimoto

Kouichi Arai

Kozo Orihara

Shinobu Suwazono

Hiroaki Utsumi

In a solid state image pickup device of the invention, photoelectric transforming regions in each of which a plurality of photoelectric transforming parts are arranged at predetermined intervals in a first predetermined direction and charge transfer regions extending in the first direction are alternately arranged in a second predetermined direction which perpendicularly crosses the first predetermined direction. There are also provided bridge regions formed in regions sandwiched by two photoelectric transforming parts in order to connect the charge transfer regions neighboring in the second predetermined direction. The bridge region has: a first bridge wiring extending in the second predetermined direction; an oxide film formed so as to cover the periphery of the first bridge wiring; and second and forth bridge wirings formed via the oxide film on the side wall part of the first bridge wiring in the first predetermined direction.

CCD-type solid state image sensor with a wiring arrangement that improves flatness

In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the first insulating layer and are a double structure formed by a first conductive layer and a second conductive layer having a lower resistance value than the first conductive layer. A second insulating layer is interposed between two adjacent ones of the charge transfer electrodes.

Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes

A solid state image sensing element has a miniature lens buried in a transparent interlayer insulating layer over a photo diode formed in a semi-conductor substrate, and the miniature lens occupies an area wider than an area occupied by the photo diode so that the solid state image sensing element is sensitive without sacrifice of production cost.

Solid state image sensing element improved in sensitivity and production cost, process of fabrication thereof and solid state image sensing device using the same

CCD type solid state image pickup device having double-structured charge transfer electrodes

A semiconductor device is disclosed that has a barrier metal layer between a silicon electrode and a metal electrode. For providing contacts on a charge transfer electrode made up of polysilicon, between the electrode and a shield film, which is a conductive film, without causing changes in channel potential or threshold voltage or influencing the charge transfer rate, a barrier metal layer composed of a metal silicide is provided between the shield film and the charge transfer electrode.

Semiconductor device having barrier metal layer between a silicon electrode and metal electrode and manufacturing method for same

A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N.sup.- -type impurity layer that functions as a CCD channel is formed with N.sup.-- -type impurity regions that have impurity concentration lower than that of the N.sup.- -type impurity layer. The N.sup.- -type impurity regions are located below transfer electrodes in alignment with contact apertures.

Solid state image sensor and its fabrication

A solid state image sensing element has a miniature lens buried in a transparent interlayer insulating layer over a photo diode formed in a semiconductor substrate, and the miniature lens occupies an area wider than an area occupied by the photo diode so that the solid state image sensing element is sensitive without sacrifice of production cost.

Solid state image sensing element improved in sensitivity and production

Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Solid state imaging apparatus having a plurality of metal wirings for

A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of the first transfer electrode isothermally oxidized to form a second silicon oxide film. Thereafter, a polycrystalline silicon film and a third silicon oxide film are formed on the entire surface and patterned to form a second transfer electrode. A fourth silicon oxide film is formed on the entire surface, and is etched back. Thereafter, the side wall surfaces of the third silicon oxide film and the second transfer electrode are covered with a fourth silicon oxide film. Thereafter, a light shielding film is selectively formed on them.

Method of making CCD-type solid-state pickup device

A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of the first transfer electrode is thermally oxidized to form a second silicon oxide film. Thereafter, a polycrystalline silicon film and a third silicon oxide film are formed on the entire surface and patterned to form a second transfer electrode. A fourth silicon oxide film is formed on the entire surface, and is etched back. Thereafter, the side wall surfaces of the third silicon oxide film and the second transfer electrode are covered with a fourth silicon oxide film. Thereafter, a light shielding film is selectively formed on them.

CCD-type solid-state pickup device and its fabrication method

At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850.degree. to 950.degree. C. to form thermal oxide layers. After depositing a polycrystalline silicon layer over the substrate, rapid annealing is performed the first transfer electrodes, the thermal oxide layers and the polycrystalline silicon layer by a halogen lamp. Thus, after forming the polycrystalline silicon layer to be second transfer electrodes, annealing is performed by heating by lamp. Therefore, the thermal oxide layers can be efficiently heated by the irradiation heat from the polycrystalline silicon layer located upper side thereof and also from the first electrodes located at backside. Accordingly, the tolerance voltage of the thermal oxide layer can be improved and the thickness of the thermal oxide layer can be made thinner.

Fabrication process for solid-state image pick-up device with CCD

An insular shaped polycrystalline silicon film is formed by adhering its entire bottom face to the surface of a insulation film which is formed on the main face of a silicon substrate. A resistance element which contains designated impurities is formed in the central part of the polycrystalline silicon film. A non-doping region which essentially does not contain impurities and is adheres to all the sides of the resistance element, is positioned on the peripheral region except for the central part of the polycrystalline silicon film. By performing heat treatment when a non-doping amorphous silicon pattern is formed on the insulating film, the amorphous silicon pattern is convened to a non-doping polycrystalline silicon pattern. By using this method, a semiconductor device which has only small variances in its resistance value, which provides more efficient heat radiation, and which enables higher integration of a silicon substrate can be obtained.

Semiconductor device

A method for manufacturing a semiconductor device in which an opening is formed in an insulation film laid on a semiconductor substrate, and in which an annular trench that is narrower than a minimum width obtained by lithography is formed in the semiconductor substrate along the opening in a self-aligned manner. The method includes the steps of: forming a first insulation film on a main surface of a semiconductor substrate; forming an opening in the first insulation film; forming an annular film along the inner sidewall of the opening; forming a second insulation film on the surface of the semiconductor substrate surrounded by the annular film; removing the annular film to cause the semiconductor substrate to be annularly exposed; forming an annular trench by etching the exposed area of the semiconductor substrate; and forming a film layer containing at least a third insulation film over the entire main surface of the semiconductor substrate including the inside of the annular trench.

Growing community of inventors

Tokyo, Japan

Chihiro Ogawa