Sumitomo Electric Industries, Limited

Chihiro Kawai

Akira Yamakawa

Takahiro Matsuura

Yoshinobu Takeda

Akira Fukui

Shin-ichi Yamagata

Seiji Nakahata

Masaya Miyake

Osamu Komura

Hisao Takeuchi

Kenji Matsunuma

Kaoru Murabe

Matsuo Higuchi

Tetsuya Katayama

Norio Yasuoka

Osamu Suwata

Hirohiko Nakata

Masami Tatsumi

Ryuichi Inoue

Jin-Joo Park

Akihito Fujii

Tadashi Igarashi

Tomoji Goto

A surface light-emitting device having a surface emitter for emitting visible light or ultraviolet light by electroluminescence also has multiple through-holes that define fluid channels for fluid flow in a direction orthogonal to the surface of the surface emitter. The present invention also provides an optically assisted ceramic filter composed of a ceramic filter having multiple channels, and a photocatalytic layer and surface emitter disposed on a side surface of the ceramic filter.

Surface light-emitting device, filtering device using same, and optically assisted ceramic filter

A filter for trapping, sterilizing, and decomposing organic matter, bacteria, viruses, and other harmful substances is provided at low cost and extremely high efficiency. A semiconductor material having a light emitting function is formed in the interior or on the surface of a porous ceramic material substrate by deposition from a suspension of semiconductor particles, and an electrode provided to serve as a filter. Voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed.

Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particles

The present invention provides a composite material having comparatively high thermal conductivity and a small coefficient of thermal expansion, which is low cost and preferable as a heatsink material. A graphite powder and an alloy powder, whose main constituent is Ag and Cu, and including Ti, etc., which is selected from the elements belonging to 4A, 5A and 6A groups, are blended together, and are heated at a higher temperature than the melting point of the alloy in a vacuum state or in a gas atmosphere of He, Ar or hydrogen. A coating layer of metal carbide such as TiC is formed on the surface of the graphite grains, and at the same time, they are transformed into a sintered body. The composite material thus obtained is such that the relative density thereof is 70% or more, thermal conductivity thereof is 220 W/m&middot;K or more at room temperature, and the mean coefficient of thermal expansion from the room temperature to 200&deg; C. is 5 through 15&times;10 /&deg;C. Therefore, the composite material is best suitable as heatsink members for semiconductors. In addition, carbide powder such as carbon fibers or SiC may be used instead of graphite powder.

High thermal conductivity composite material, and method for producing the same

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600&deg; C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

Member for semiconductor device and method for producing the same

A silicon carbide based composite material includes as a first component, a metal mainly consisting of aluminum or copper, and as a second component, particles mainly consisting of silicon carbide having high purity and few defects. The material is obtained by heating a compact of the raw material powder containing the first and second components at a temperature not lower than the melting point of the metal mainly consisting of aluminum or copper, and by forging and solidifying under pressure. Preferably, the silicon carbide raw material powder is prepared to have high purity by carrying out a preliminary treatment, or the material after forging or a material obtained through a conventional infiltration process is further heated at a temperature lower than the melting point of the first component. In this manner, an improved superior thermal conductivity can be obtained.

Silicon carbide based composite material and manufacturing method thereof

A ceramic filter module includes a plurality of passage holes (,) and internal passage holes (,) alternately arranged about a plurality of ceramic partitions (,). The internal passage holes are sealed at each end by seals (,). The partitions are at most 1 mm thick and allow fluid to be filtered as the fluid flows from passage holes (,) to the internal passage holes (,). A plurality of discharge holes (,) traversing through the ceramic partitions between adjacent internal passage holes or between an internal passage hole and an outer surface allow the permeate to exit. The module is a porous ceramic body that preferably has an average pore diameter of 1 &mgr;m and is composed of silicon nitride. The ceramic filter module has the advantages of low permeation resistance and very high permeability.

Ceramic filter module

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

Aluminum base member for semiconductor device containing a nitrogen rich

Radome which is mainly constituted of at least one porous ceramic material. The radome is useful as a cover for protecting a radar, which is excellent in weather resistance, machinability and relative dielectric constant. The porous ceramic radome material may be coated or impregnated with a resin, amorphous silica or borosilicate glass in order to improve the tightness and the resistance to heat and oxidation.

Radome

A porous ceramic film which is formed onto and bonded to an oxide layer provided on the surface of a porous base, the film composed of finely deposited particles comprising at least one compound including (a) at least one selected from the group consisting of Si, B and Al or the group consisting of the metals of the Groups IVa, Va and VIa and (b) at least one selected from the group consisting of C and N in which the particles are intertwined with each other and bonded to each other through the component of the oxide layer to form a three-dimensionally intertwined structure. This porous ceramic film is produced by forming the oxide layer on the base surface and then heating it to a temperature of at least of the liquid-phase formation temperature of the oxide layer in a gaseous atmosphere containing the above elements (a) and (b). The porous ceramic film has a high porosity, a good pressure resistance and a regulated pore size and is appropriate for a filter, a catalyst support, bioreactor or a structural material.

Porous ceramic film and process for producing the same

A silicon nitride ceramic porous body having excellent acid and alkali resistance, mechanical strength, and durability can be employed as a filter or a catalytic carrier. The silicon nitride porous body contains a plurality of silicon nitride crystal grains with pores formed in grain boundary parts thereof, or includes a body part and a pore part wherein the body part is formed by a plurality of silicon nitride crystal grains and the pore part forms a three-dimensional network structure. The body part is formed by at least 90 vol. % of silicon nitride crystal grains, which are directly bonded to each other. In order to prepare the finished ceramic porous body, a porous body compact which is mainly composed of silicon nitride, is brought into contact with an acid and/or an alkali so that a component other than silicon nitride is partially or entirely dissolved and removed from the compact. The compact is prepared from a mixed powder of silicon nitride powder and at least one of a rare earth compound powder, a transition metal compound powder, and a bismuth compound, which is heat treated in the temperature range from 1600.degree. C. to 2100.degree. C.

Method of preparing silicon nitride porous body

A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.

High-strength porous silicon nitride body and process for producing the

A slide member has a sliding surface made of ceramic and a has surface roughness of not more than 1.0 .mu.m in center line average roughness Ra. The ceramics includes a silicon nitride sintered body which contains crystal grains having a linear density of at least 35 per 30 .mu.m in length with a boundary phase volume ratio of not more than 15 volume %, and which contains pores of not more than 20 .mu.m in maximum diameter in a content of not more than 3%. In a method of manufacturing the slide member, it is possible to ensure smoothness of the sliding surface by grinding the sliding surface and thereafter heating the ceramic in an either an inert gas or atmospheric air. A slide member that can be used under severe sliding conditions of high-speed sliding or the like and that has excellent wear resistance is obtained. Even if the slide member is used for to a sliding part of a compressor or the like which employs a fluorocarbon containing no chlorine as a cooling medium, it is possible to prevent the occurrence of seizure and abnormal wear on the sliding surface.

Slide member and method of manufacturing the same

A ceramic porous body for a filter or a catalyst carrier, having a structure in which voids each having the same volume as that of a sphere of 10 .mu.m to 500 .mu.m in diameter are formed and the voids are communicated with each other through smaller fine pores, the ceramic porous body having a volume fraction of the voids and the fine pores of from 15% to 60% and being formed of components 70% or higher by volume of which is silicon nitride. The ceramic porous body is prepared by mixing coarse silicon nitride powder with fine silicon nitride powder(s) at a mixing ratio by volume of the fine silicon nitride powder to the combined volume of the fine and coarse silicon nitride powders in the range of 1/99 to 1/2; adding one or more compounds of the group IIa elements, the group IIIa elements, transition metals, Al and Si in a range of 1% to 30% by volume as their oxides to the silicon nitride powder mixture; molding the resultant powder mixture; and sintering the molded body in a non-oxidizing atmosphere of at least 0.9 atm at a temperature ranging from 1100.degree. C. to 2000.degree. C.

Ceramic porous body and method for preparing the same

A ceramics porous body having high porosity as well as high strength is especially suitable for use as a filter for removing foreign matter from a fluid or as a catalytic carrier. The porous body has a porosity of at least 30% and comprises columnar ceramic grains having an aspect ratio of at least 3. In particular, the porous body comprises Si.sub.3 N.sub.4 grains, of which at least 60% are hexagonal columnar .beta.-Si.sub.3 N.sub.4 grains. The porous body further comprises at least one compound of a rare earth element in an amount of at least 1 volume % and not more than 20 volume % in terms of an oxide of the rare earth element, and optionally at least one compound of elements of the groups IIa and IIIb of the periodic table and transition metal elements in an amount of not more than 5 volume % in terms of an oxide of each element. A compact of mixed powder obtained by adding the compound powder of the rare earth element to silicon nitride powder is heat treated in a nitrogen atmosphere at a temperature of at least 1500.degree. C., to prepare the silicon nitride ceramic porous body.

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Itami, Japan

Chihiro Kawai