Ube Industries, Inc.

Ulvac, Inc.

Chihiro Hasegawa

Takumi Kadota

Hiroshi Nihei

Hiroki Kanato

Kouhei Watanuki

Masashi Shirai

Michio Ishikawa

Hideaki Zama

Hiroyuki Sakurai

The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein

Tris(dialkylamide)aluminum compound, and method for producing aluminum-containing thin film using same

An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Rand Rindependently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex

Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S).

Method for manufacturing semiconductor device

To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. A metal complex compound comprising a &#x3b2;-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.

Metal complex compound comprising &#x3b2;-diketonato ligand

Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing &#x3b2;-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I):wherein Z is hydrogen or alkyl; X is a group represented by the formula (I&#x2014;I), in which Ris alkylene, and each of R, Rand Ris alkyl; and Y is an alkyl group or a group represented by the formula (I&#x2014;I), in which Ris alkylene, and each of R, Rand Ris alkyl.

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Ube, Japan

Chihiro Hasegawa