Princeton University

University of Southern California

Universal Display Corporation

Semiconductor Energy Laboratory Co., Ltd.

Rohm Co., Ltd.

Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo

Pioneer Corporation

Kyoto University

Chihaya Adachi

Stephen R Forrest

Marc A Baldo

Mark Edward Thompson

Peter I Djurovich

Raymond Kwong

Vadim Adamovich

Sergey Lamansky

Takahito Oyamada

Paul E Burrows

Yoshiaki Yamamoto

Yasunori Taga

Hisayoshi Fujikawa

Shizuo Tokito

Koji Noda

Yoshio Taniguchi

Sadaharu Suga

Makoto Satsuki

Xiaofan Ren

Atsushi Miura

Gautam Parthasarathy

Toshiki Koyama

Haiping Hong

Akira Shinpo

Tomoyasu Saitou

Haruo Tanaka

Naotoshi Suganuma

Hiroyuki Sasabe

Raymond C Kwong

Stephen Forrest

Peter L Djurovich

Mark Thompson

An organic semiconductor device in which recombination of holes and electrons and photoelectric conversion in an organic semiconductor layer are efficiently allowed to occur. The device comprises a bipolar organic semiconductor layer where electrons and holes move, a hole giving/receiving electrode which gives/receives holes to/from the organic semiconductor layer, an electron giving/receiving electrode which is spaced a predetermined distance from the hole giving/receiving electrode and gives/receives electrons to/from the organic semiconductor layer, a hole-side gate electrode which is opposed to a region of the organic semiconductor layer near the hole giving/receiving electrode with an insulating layer between the hole-side gate electrode and the region and serves to control the hole distribution in the organic semiconductor layer, and an electron-side gate electrode which is opposed to the region of the organic semiconductor layer with the insulating layer therebetween and serves to control the electron distribution in the organic semiconductor layer.

Organic semiconductor device, display using same, and imager

An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Organic semiconductor device

The present invention relates to an organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.

Phosphorescent organic light emitting devices

Emissive phosphorescent organometallic compounds are described that produce improved electroluminescence, particularly in the blue region of the visible spectrum. Organic light emitting devices employing such emissive phosphorescent organometallic compounds are also described. Also described is an organic light emitting layer including a host material having a lowest triplet excited state having a decay rate of less than about 1 per second; a guest material dispersed in the host material, the guest material having a lowest triplet excited state having a radiative decay rate of greater than about 1&#xd7;10or about 1&#xd7;10per second and wherein the energy level of the lowest triplet excited state of the host material is lower than the energy level of the lowest triplet excited state of the guest material.

Organometallic compounds and emission-shifting organic electrophosphorescence

4-Cyanocoumarin derivatives which have a distinct sensitivity to visible light, distinct luminescent ability, and satisfactory applicability for photochemical polymerization, dye lasers, and organic electroluminescent elements. Since most of the derivatives have a fluorescent maximum wavelength of 600 to 650 nm, particularly, 610 to 630 nm, they are extremely useful as luminescent agents for organic EL elements which emit visible light in a red-color region, and can be quite useful as luminescent agents in organic EL elements and laser-active substances in dye lasers, as well as luminous bodies as lighting sources for lighting devices, and information displays for visually displaying information.

4-cyanocoumarin derivatives and uses thereof

Light emitting devices having charge transporting layers comprising one or more metal complexes are provided. More particularly, devices include hole transporting layers comprising at least one organometallic complex are disclosed. The present devices can further comprise an electron blocking layer for improved efficiency.

Organic light emitting devices having carrier transporting layers comprising metal complexes

Light emitting devices having charge transporting layers comprising one or more metal complexes are provided. More particularly, devices include hole transporting layers comprising at least one metal complex are disclosed. The present devices can further comprise an electron blocking layer for improved efficiency.

The present invention is directed to simplified OLED structures comprising an anode layer, a hole injecting layer (HIL) in direct contact with the anode layer, an emissive organic electron transporting layer (ETL) in direct contact with the hole injecting layer, and a cathode layer in direct contact with the emissive organic electron transporting layer. The hole injecting material used in the hole injecting layer is characterized, in particular, as being an organic material having an ionization potential that is not more than about 0.7 eV greater than the ionization potential of the material used for the anode layer. The emissive organic electron transporting layer comprises an organic electron transporting material and an organic hole-trapping emissive material, for example, an organic phosphorescent material that produces emission from a triplet excited state of an organic molecule.

Highly efficient OLEDs using doped ambipolar conductive molecular organic thin films

A highly transparent non-metallic cathode is disclosed that comprises a metal-doped organic electron injection layer that is in direct contact with a transparent non-metallic electron injecting cathode layer, such as indium tin oxide (ITO), wherein the metal-doped organic electron injection layer also functions as an exciton blocking or hole blocking layer. The metal-doped organic electron injection layer is created by diffusing an ultra-thin layer of about 5-10 &#x212b; of a highly electropositive metal such as Li throughout the layer. A representative embodiment of the highly transparent non-metallic cathode comprises a layer of ITO, a layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), which acts as an electron injection, exciton blocking, and hole blocking layer, and an ultra-thin layer of lithium, which degenerately dopes the layer of BCP, improving the electron injecting properties of the BCP layer. This cathode is demonstrated for use in an OLED having a transparency of about 90% or higher combined with a device external quantum efficiency of about 1% or higher.

High efficiency transparent organic light emitting devices

Phosphorescent OLEDs having a double doped-layer structure wherein the OLEDs include a hole transporting layer (HTL) having a phosphorescent material doped therein, and an electron transporting layer (ETL) having the same phosphorescent material doped therein. Typically, these phosphorescent OLEDs have an anode, a first HTL over the anode, a second HTL that is doped with a phosphorescent material over the first HTL, a first ETL that is doped with a phosphorescent material over the second HTL, a second ETL over the first ETL, and a cathode over the second ETL. These phosphorescent OLEDs preferably include blue phosphorescent OLEDs with high efficiency levels.

Double doped-layer, phosphorescent organic light emitting devices

The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.

Switching element and method of making the same

An organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.

Growing community of inventors

Hokkaido, Japan

Chihaya Adachi