Kabushiki Kaisha Toshiba

Chiharu Nozaki

Koichi Nitta

Haruhiko Okazaki

Shinji Saito

Masayuki Ishikawa

Minoru Amano

Johji Nishio

Hidetoshi Fujimoto

Genichi Hatakoshi

Yukie Nishikawa

Masaaki Onomura

Masayuki Sugiura

Takao Noda

Norio Iizuka

Yasuo Ashizawa

Aki Sasaki

Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.

Semiconductor light emitting device and its manufacturing method

Nitride semiconductor LED with embossed lead-out surface

In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.

Nitride semiconductor light emitting device and its manufacturing method

In an HEMT, a channel forming layer is arranged above a semi-insulating substrate via a buffer layer. A spacer layer is arranged on the channel forming layer and an electron supplying layer and a Schottky contact layer are sequentially arranged on the spacer layer. A diffusion preventing layer, for preventing a metal element of a gate electrode from diffusing into the channel forming layer, is arranged in the Schottky contact layer.

Semiconductor device

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Yokohama, Japan

Chiharu Nozaki