Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Chih-Yuan Hou

Cheng-He Ruan

Jian-Jhou Tseng

YewChung Sermon Wu

Po-Chih Liu

Guo-Ren Hu

A display device includes a flexible substrate, a bonding pad, a light-emitting diode, an encapsulant, and a support structure. The bonding pad and the light-emitting diode are located on the flexible substrate. The encapsulant covers the light-emitting diode. The support structure is laterally located between the light-emitting diode and the bonding pad. The support structure has an inclined surface, and a thickness of the support structure close to the light-emitting diode is greater than the thickness of the support structure close to the bonding pad.

Display device and manufacturing method thereof

A display panel includes a substrate and display pixels. The display pixels are disposed on the substrate, and each of the display pixels includes pad sets, light-emitting devices, a first connecting wire, a second connecting wire, and first cutting regions. Each pad set has a first pad and a second pad. The light-emitting devices are electrically bonded to at least part of the pad sets. The first connecting wire is electrically connected to the first pads of a plurality of first pad sets of the pad sets. The second connecting wire is electrically connected to the second pads of the pad sets. The first cutting regions are disposed on one side of each of the first pad sets. Two first connecting portions of the first connecting wire and the second connecting wire connecting each of the first pad sets are located in one of the first cutting regions.

Display panel

A method of manufacturing a display device includes the following steps. A bonding pad is formed on a dielectric layer. A light-shielding material is formed on the dielectric layer. A temperature of the light-shielding material is increased such that the light-shielding material is cured into a light-shielding layer. During curing the light-shielding material into the light-shielding layer, the light-shielding material flows to and contacts a portion of a surface of the bonding pad. A light-emitting element is electrically connected to the bonding pad.

Display device and method of manufacturing the same

A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer disposed between the gate electrode and the channel layer, an etching stop layer disposed on the channel layer, and a source electrode and a drain electrode disposed on the etching stop layer. The gate electrode has multiple through holes, the etching stop layer has multiple contact holes overlapped with the through holes in a direction perpendicular to the substrate, and the source and drain electrodes are respectively electrically connected to the channel layer through the contact holes. A method of manufacturing the thin film transistor, where the contact holes in the etching stop layer are formed by backside exposure using the gate electrode as a mask. A conductivity of a region of the channel layer exposed by the contact holes has a great conductivity.

Thin film transistor and manufacturing method thereof

A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (&#x3b1;-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the &#x3b1;-Si layer. After that, a doped microcrystalline silicon (&#x3bc;c-Si) layer is formed on the treated surface of the &#x3b1;-Si layer, wherein interface defects existing between the &#x3b1;-Si layer and the doped &#x3bc;c-Si layer occupy an area in a cross-sectional region having a width of 1.5 micrometers and a thickness of 40 nanometers, and a ratio of the occupied area in the cross-sectional region is equal to or less than 10%. The method of fabricating the semiconductor stacking layer can be applied to a fabrication process of a semiconductor device to effectively reduce the interface defects of the semiconductor stacking layer.

Semiconductor stacking layer and fabricating method thereof

A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (a-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the a-Si layer. After that, a doped microcrystalline silicon (&#x3bc;c-Si) layer is formed on the treated surface of the a-Si layer, wherein interface defects existing between the a-Si layer and the doped &#x3bc;c-Si layer occupy an area in a cross-sectional region having a width of 1.5 micrometers and a thickness of 40 nanometers, and a ratio of the occupied area in the cross-sectional region is equal to or less than 10%. The method of fabricating the semiconductor stacking layer can be applied to a fabrication process of a semiconductor device to effectively reduce the interface defects of the semiconductor stacking layer.

A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.

Growing community of inventors

Chiayi, Taiwan

Chih-Yuan Hou