Taiwan Semiconductor Manufacturing Comp. Ltd.

Mazda Motor Corporation

Rexchip Electronics Corporation

Chih-Yuan Chen

Shih-Chi Fu

Hiroshi Tanaka

Ching-Sen Kuo

Kei Yonemori

Wen-Chen Lu

Akihiro Furukawa

Chih-Wei Hsiung

Osami Ohno

Meng-Hsien Chen

Li-Hsuan Huang

Satoshi Maruyama

Iou-Uei Jang

To arrange a power unit, an electric power conversion unit, and engine-related components compactly, a drive motor, a reduction drive, a generator, and an engine body are integrally arranged in this order in a vehicle width direction of a power unit compartment such that respective heights thereof are substantially the same. An electric power conversion unit, in which a motor inverter, an electric power generation inverter, and a DC/DC converter are integrated, is arranged above the drive motor, the reduction drive, and the generator. Engine-related components such as a low-voltage battery, an air cleaner, and an oil filter are arranged above the engine body.

Electric vehicle

A sensor array is integrated onto the same chip as core logic. The sensor array uses a first polysilicon and the core logic uses a second polysilicon. The first polysilicon is etched to provide a tapered profile edge in the interface between the sensor array and the core logic regions to avoid an excessive step. Amorphous carbon can be deposited over the interface region without formation of voids, thus providing for improved manufacturing yield and reliability.

Seamless multi-poly structure and methods of making same

A three-dimensional dynamic random access memory with an ancillary electrode structure includes a substrate, at least one bit line formed on the substrate, at least one pillar element formed on a growth zone of the bit line, an ancillary electrode, a character line parallel with the substrate and perpendicular to the bit line, and at least one capacitor connecting to the pillar element. The bit line is formed on the substrate by doping and diffusing a doping element. The ancillary electrode is located on a separation zone of the bit line and adjacent to the pillar element. The character line is insulated from the ancillary electrode and incorporates with the bit line to output or input electronic data to the capacitor. Through the ancillary electrode, impedance of the bit line can be controlled to enhance conductivity of the bit line.

Three-dimensional dynamic random access memory with an ancillary electrode structure

Growing community of inventors

Taichung, Taiwan

Chih-Yuan Chen