Taiwan Semiconductor Manufacturing Comp. Ltd.

Hiwin Mikrosystem Corporation

Chih-Yu Wang

Hsi-Cheng Hsu

Jui-Chun Weng

Shyh-Wei Cheng

Ji-Hong Chiang

Wei-Ding Wu

Che-Jung Chu

Yu-Ting Hsu

Hsin-Yu Chen

Jung-Kuo Tu

Shiuan-Jeng Lin

Ching-Hsiang Hu

In-Tsang Lin

Tien-Wen Wang

Chi-Lu Li

Hsin-Hui Chou

Chuan-Yi Ko

Jong Chen

Chih-Shan Chen

Chia-Ming Chang

Chih-Mao Shiao

Chao-Po Lu

Hsiang-Ju Wang

Chin-Chia Liu

Ming-Chih Lai

Lieh-Feng Huang

Chung-Hsien Hun

Chung-Hsien Hung

Chih-Hsien Chen

Yu-Mei Wu

Hsiao Shun-Hsing

A method includes depositing a mask layer over a semiconductor substrate, etching the mask layer to form a patterned mask, wherein a sidewall of the patterned mask includes a first sidewall region, a second sidewall region, and a third sidewall region, wherein the first sidewall region is farther from the semiconductor substrate than the second sidewall region and the second sidewall region is farther from the semiconductor substrate than the third sidewall region, wherein the second sidewall region protrudes laterally from the first sidewall region and from the third sidewall region, etching the semiconductor substrate using the patterned mask to form fins, forming a gate stack over the fins, and forming source and drain regions in the fin adjacent the gate stack.

Semiconductor FinFET device and method

A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.

Method and system for recognizing and addressing plasma discharge during semiconductor processes

Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.

Systems and methods for wafer bond monitoring

An arcing detection system detects arcing within a semiconductor processing cleanroom environment. The arcing detection system includes an array of microphones positioned within the cleanroom environment. The microphones receive soundwaves within the cleanroom environment and generate audio signals based on the sound waves. The arcing system includes a control system that receives the audio signals from the microphones. The control system analyzes the audio signals and detects arcing within the cleanroom environment based on the audio signals. The control system can adjust a semiconductor process in real time responsive to detecting arcing.

Method and system for audio recognition of arcing during semiconductor process

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

System and method for monitoring chemical mechanical polishing

The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.

Inter-poly connection for parasitic capacitor and die size improvement

A method of monitoring or analyzing a manufacturing of a semiconductor structure includes providing a semiconductor structure; providing a camera disposed around the semiconductor structure; disposing a liquid substance over the semiconductor structure; removing a portion of the semiconductor structure; removing the liquid substance from the semiconductor structure; capturing a plurality of first images of the semiconductor structure by the camera; analyzing the plurality of first images; identifying a region of the semiconductor structure where a residue of the liquid substance is disposed based on the analysis of the plurality of first images; and performing a response based on the identification of the region of the semiconductor structure.

Method of analyzing a manufacturing of a semiconductor structure

In a method of operating an apparatus for manufacturing or analyzing semiconductor wafers, sound in a process chamber of the apparatus during an operation of the apparatus is detected. An electrical signal corresponding to the detected sound is acquired by a signal processor. The acquired electrical signal is processed by the signal processor. An event during the operation of the apparatus is detected based on the processed electrical signal. The operation of the apparatus is controlled according to the detected event.

System and method for monitoring operation conditions of semiconductor manufacturing apparatus

The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element.

Heater design for MEMS chamber pressure control

The present disclosure relates to micro-electromechanical system (MEMS) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in MEM device signals, and a method of formation. In some embodiments, the MEMS package has a CMOS substrate with one or more semiconductor devices arranged within a semiconductor body. A MEMS substrate having an ambulatory element is connected to the CMOS substrate by a conductive bonding structure. The conductive bonding structure is arranged on a front-side of the MEMS substrate at a location laterally offset from the ambulatory element. One or more polysilicon vias extend through the conductive MEMS substrate to the bonding structure. The one or more polysilicon vias are configured to electrically couple the MEMS substrate to the CMOS substrate. By connecting the MEMS substrate to the CMOS substrate using the polysilicon vias, the parasitic capacitance and form factor of the MEMS package are reduced.

Growing community of inventors

Taichung, Taiwan

Chih-Yu Wang