Hannstar Display Corporation

Au Optronics Corporation

E Ink Holdings Inc.

Chih-Yu Peng

Chih-Lung Lin

Chian-Chih Hsiao

Chin-Mao Lin

Ta-Ko Chuang

Wei-Chuan Lin

Chun-Hung Chu

Wei-Chieh Sun

Ya-Chieh Chen

Wei-Chen Tsai

In-Cha Hsieh

Shu-I Huang

Chai-Ling Lai

Lee-Hsun Chang

Yu-Wen Lin

Lee-Tyng Chen

Tung-Liang Lin

Shih-Ming Chen

Chia-Sheng Ho

A color display apparatus includes a driving substrate, a color filter, a display layer and an adhesive. The color filter is faced to the driving substrate. The color filter includes a substrate and a filter layer, and the filter layer is disposed on the substrate and faced to the driving substrate. The display layer is disposed between the driving substrate and the color filter, and an orthographic projection of the display layer projecting on the filter layer is surrounded by a periphery boundary of the filter layer. An interval is existed between the orthographic projection of the display layer projecting on the filter layer and the periphery boundary of the filter layer. Besides, the adhesive is disposed between the display layer and the color filter, and a periphery boundary of the display layer and the periphery boundary of the filter layer are surrounded by the adhesive.

Color display apparatus

A color display apparatus includes a driving substrate, a color filter and a display layer. The driving substrate has a display region and a non-display region, and at least a first alignment mark is disposed on the non-display region. The color filter is opposite to the driving substrate. The color filter includes a substrate and a filter layer disposed on the substrate. The substrate has a first region corresponding to the display region and a second region corresponding to the non-display region. The filter layer includes color filter patterns located on the first region and at least a second alignment mark located on the second region and corresponding to the first alignment mark. The display layer is disposed between the driving substrate and the color filter. Alignment precision between the driving substrate and the color filter of the color display apparatus is improved. Besides, a color filter is also provided.

A pixel structure including an active device, a first pixel electrode, a second pixel electrode, a coupling line, a common electrode, and a liquid crystal layer is provided. The first pixel electrode and the second pixel electrode have a plurality of sets of stripped electrode patterns extending along different directions, respectively, and the first pixel electrode is electrically insulated from the second pixel electrode. The coupling line is disposed under the first and the second pixel electrode and electrically insulated from the second pixel electrode. The first pixel electrode is electrically connected to the active device through the coupling line. The common electrode is disposed over the first and the second pixel electrode. The liquid crystal layer is disposed between the common electrode and the first and second pixel electrodes. Moreover, the liquid crystal layer has two polymer layers and a liquid crystal molecule layer disposed between the polymer layers.

Pixel structure and liquid crystal display panel

An active device array substrate is provided. The active device array substrate includes a plurality of pixel units. Each of the pixel units includes a first active device, a first scan line, a second active device, a second scan line, a data line, a common line, and a pixel electrode. The first scan line is electrically connected to a first gate of the first active device. The second scan line is electrically connected to a second gate of the second active device. The data line is electrically connected to a first source of the first active device. The common line is electrically connected to a second source of the second active device. The pixel electrode is electrically connected to a first drain of the first active device and a second drain of the second active device.

Active device array substrate, liquid crystal display panel, electro-optical device, method for fabricating the same, and methods for driving the same

A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

Thin film transistor array substrate

A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor

A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display

A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.

Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor

A method of patterning an indium tin oxide (ITO) layer is performed on a glass substrate. First, using sputtering, an amorphous ITO layer is deposited on the glass substrate. Then, using excimer laser annealing (ELA), the amorphous ITO layer within a predetermined pattern is turned into a crystalline ITO layer. Finally, using an etch solution, the amorphous ITO layer outside the predetermine pattern is removed.

Growing community of inventors

Hsinchu, Taiwan

Chih-Yu Peng