Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Yu Lai

Yeur-Luen Tu

Cheng-Hsien Chou

Chih-Liang Chen

Chia-Shiung Tsai

Cheng-Ta Wu

Ching-Chun Wang

Chi-Yu Lu

Shih Pei Chou

Shyh-Fann Ting

Hui-Zhong Zhuang

Cheng-Yuan Tsai

Sheng-Chau Chen

Ching-Wei Tsai

Shang-Wen Chang

Hsiao-Hui Tseng

Min-Ying Tsai

Jiech-Fun Lu

Tsun-Kai Tsao

Wen-I Hsu

Shang-Syuan Ciou

Li-Chun Tien

Chih-Hui Huang

Yen-Ting Chiang

Kai-Chun Hsu

Shang-Hsuan Chiu

Dun-Nian Yaung

Tzu-Hsuan Hsu

Chun-Wei Chang

Hai-Dang Trinh

Wei-Cheng Hsu

Chih-Ta Chen

Neng-Kuo Chen

Szu-Yu Wang

Chun-Han Tsao

Luan Conn Tran

Jhy-Jyi Sze

Kuo-Ming Wu

Chia-Tien Wu

Yi-Hsun Chiu

Kuo-Hwa Tzeng

An integrated circuit (IC) structure includes two active areas extending in a first direction, two gate structures extending in a second direction, a first metal segment extending in the second direction in a first metal layer, second and third metal segments extending in the first direction in a second metal layer, and a gate via structure extending from the third metal segment to one of the gate structures. The gate structures overlie the active areas, the first metal segment overlies each of the active areas between the gate structures, the second metal segment overlies a first active area and overlies and is electrically connected to the first metal segment, and the first and second metal segments are electrically connected to the second active area, isolated from the first active area between the gate structures, and connected to the first active area outside the gate structures.

First metal structure, layout, and method

A semiconductor device includes a substrate. The semiconductor device further includes a first gate structure on a first side of the substrate. The semiconductor device further includes a second gate structure on a second side of the substrate, wherein the first side is opposite the second side. The semiconductor device further includes a gate via extending through the substrate, wherein the gate via directly connects to the first gate structure, and the gate via directly connects to the second gate structure.

Method of making amphi-FET structure and method of designing

An integrated circuit includes a set of transistors including a set of active regions, a set of power rails, a first set of conductors and a first conductor. The set of active regions extends in a first direction, and is on a first level. The set of power rails extends in the first direction and is on a second level. The set of power rails has a first width. The first set of conductors extends in the first direction, is on the second level, and overlaps the set of active regions. The first set of conductors has a second width. The first conductor extends in the first direction, is on the second level and is between the first set of conductors. The first conductor has the first width, electrically couples a first transistor of the set of transistors to a second transistor of the set of transistors.

Integrated circuit and method of forming same

An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. A distance from a first horizontal cell boundary to a proximal edge of the first conductor segment is larger than a distance from a second horizontal cell boundary to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.

Arrangement of source or drain conductors of transistor

A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

Method of making semiconductor device having self-aligned interconnect structure

A method includes forming a first transistor stack over a substrate. The first transistor stack includes: a first transistor of a first conductivity type, and a second transistor of a second conductivity type different from the first conductivity type. The second transistor is above the first transistor. A plurality of first conductive lines is formed in a first metal layer above the first transistor stack. The plurality of first conductive lines includes, over the first transistor stack, a power conductive line configured to route power to the first transistor stack, one or more signal conductive lines configured to route one or more signals to the first transistor stack, and a shielding conductive line configured to shield the routed one or more signals. The one or more signal conductive lines are between the power conductive line and the shielding conductive line.

Method of manufacturing integrated circuit

An integrated circuit device includes a first-type active-region semiconductor structure, a second-type active-region semiconductor structure stacked with the first-type active-region semiconductor structure, a front-side power rail in a front-side conductive layer, and a back-side power rail in a back-side conductive layer. The integrated circuit device also includes a source conductive segment intersecting the first-type active-region semiconductor structure at a source region of a transistor, a back-side power node in the back-side conductive layer, and a top-to-bottom via-connector. The source conductive segment is conductively connected to the front-side power rail through a front-side terminal via-connector. The top-to-bottom via-connector is connected between the source conductive segment and the back-side power node.

Integrated circuits having stacked transistors and backside power nodes

A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Deep trench isolations and methods of forming the same

An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; a radiation-sensing region formed in the substrate; an opening extending from the back surface of the substrate into the substrate; a first metal oxide film including a first metal, the first metal oxide film being formed on an interior surface of the opening; and a second metal oxide film including a second metal, the second metal oxide film being formed over the first metal oxide film; wherein the electronegativity of the first metal is greater than the electronegativity of the second metal. An associated fabricating method is also disclosed.

Image sensor having stacked metal oxide films as fixed charge film

An integrated circuit (IC) structure includes first and second active areas extending in a first direction in a semiconductor substrate, first and second gate structures extending in a second direction perpendicular to the first direction, wherein each of the first and second gate structures overlies each of the first and second active areas, a first metal-like defined (MD) segment extending in the second direction between the first and second gate structures and overlying each of the first and second active areas, and an isolation structure positioned between the first MD segment and the first active area. The first MD segment is electrically connected to the second active area and electrically isolated from a portion of the first active area between the first and second gate structures.

Source/drain isolation structure, layout, and method

A semiconductor device includes a base isolation layer, a first transistor with a first source electrode at a first side of the base isolation layer. A bridge pillar extends through the base isolation layer, and a metal electrode electrically connects the bridge pillar to the first source electrode. The metal electrode and the first source electrode are at the same side of the base isolation layer. A second metal electrode at an opposite side of the base isolation layer electrically connects to the bridge pillar and to a conductive line at the second side of the base isolation layer.

Semiconductor device segmented interconnect

A method of making a semiconductor device includes forming a first active region on a first side of a substrate. The method further includes forming a first source/drain (S/D) electrode surrounding a first portion of the first active region. The method further includes forming an S/D connect via extending through the substrate. The method further includes flipping the substrate. The method further includes forming a second active region on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate. The method further includes forming a second S/D electrode surrounding a first portion of the second active region, wherein the S/D connect directly contacts both the first S/D electrode and the second S/D electrode.

A circuit structure includes a substrate that includes a first transistor stack over the substrate that includes: a first transistor where the first transistor is a first conductivity type; and a second transistor, above the first transistor, where the second transistor is a second conductivity type different from the first conductivity type. The structure also includes a plurality of first conductive lines in a first metal layer above the first transistor stack, the plurality of first conductive lines electrically connected to the first transistor stack. The structure also includes a plurality of second conductive lines in a second metal layer below the substrate and underneath the first transistor stack, the plurality of second conductive lines electrically connected to the first transistor stack. The plurality of first conductive lines are configured asymmetrically with respect to the plurality of second conductive lines.

Integrated circuit conductive line arrangement for circuit structures, and method

An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. The first conductor has a distal edge separated from a first power rail, and the second conductor segment is connected to a second power rail through a via-connector. A distance from the first power rail to a proximal edge of the first conductor segment is larger than a distance from the second power rail to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.

A semiconductor device includes a substrate and a first transistor on a first side of the substrate. The semiconductor device further includes a first electrode contacting a first region of the first transistor. The semiconductor device further includes a spacer extending along a sidewall of the first transistor. The semiconductor device further includes a self-aligned interconnect structure (SIS) separated from at least a portion of the first electrode by the spacer, wherein the SIS extends through the substrate. The semiconductor device further includes a second electrode contacting a surface of the first electrode farthest from the substrate, wherein the second electrode directly contacts the SIS.

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Tainan, Taiwan

Chih-Yu Lai