Applied Materials, Inc.

Chih-Yang Chang

Yao-Hung Yang

Shannon Wang

Sean S Kang

Shiyu Sun

Raymond Hoiman Hung

Nikolaos Bekiaris

Tatsuya E Sato

Bingxi Sun Wood

Sam Hyungsam Kim

Chia-Ling Kao

Nam Sung Kim

Jianqi Wang

Methods and apparatus for scanning a code on or in a transparent part, the method comprising: illuminating the code to generate a projected image of the code on a projection surface spaced from the transparent part; and machine scanning the projected image.

Method and system for scanning a code on a transparent part

A method of determining an operational status of a semiconductor manufacturing assembly uses internal vibrations of an in-situ assembly to detect defects. The method may include initiating a first test vibration in an internal structure of the semiconductor manufacturing assembly while the semiconductor manufacturing assembly is in-situ in a semiconductor processing chamber, receiving a first vibration signal caused by the first test vibration, transforming the first vibration signal into a first frequency domain representation of the first vibration signal, determining the operational status of the semiconductor manufacturing assembly based on the first frequency domain representation, and performing a corrective action for the semiconductor manufacturing assembly in response to the operational status.

Detecting defects of semiconductor manufacturing assemblies

Methods for texturing a surface of a component which include partially submerging the component within a liquid such that a first portion of the component is not submerged in the liquid and a second portion of the component is submerged in the liquid; and contacting at least the first portion of the component with a laser beam at a power and for a period of time sufficient to texture the first portion of the component to a first surface roughness, wherein the second portion of the component is either not textured by the laser beam, or is textured to a lesser degree than the first portion of the component and has a second surface roughness which is less than the first surface roughness.

Method and apparatus for laser texturing a component

A sealing member includes a monolithic body including a first portion adjoining a second portion. The first portion forms part of a circle. The second portion includes first and second lobes. Each lobe adjoins the first portion with a concave surface. In one example, each lobe includes a rounded tip, and a convex surface extends from one rounded tip to the other rounded tip.

Sealing member with lip seal

Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a three-dimensional fin structure protruding from a surface of a substrate, the three-dimensional fin structure comprising a top surface and two opposing sidewalls, a first insulating layer formed on the two opposing sidewalls of the three-dimension fin structure, a sacrificial spacer layer conformally formed on the first insulating layer, wherein the sacrificial spacer layer comprises an aluminum oxide based material or a titanium nitride based material, and a second insulating layer conformally formed on the sacrificial spacer layer.

Method of fabricating air-gap spacer for N7/N5 finFET and beyond

Methods of fabricating ultra low-k dielectric self-aligned vias are described. In an example, a method of forming a self-aligned via (SAV) in a low-k dielectric film includes forming a trench pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. A via pattern is formed in a masking layer formed above the metal nitride hardmask layer. The via pattern is etched at least partially into the low-k dielectric film, the etching comprising using a plasma etch using a chemistry based on CF, H, and a diluent inert gas composition.

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Cupertino, CA, United States of America

Chih-Yang Chang