Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Wei Wen

Chung-Hung Lin

Tzu Han Liu

Wu-Hung Ko

Chien-Lin Chen

Hsin-Fu Tseng

Kun-Lung Hsieh

Po-Chien Huang

Ting-Hsien Ko

Chien-Hsing Lu

Hsuan Jung Chang

Chih-chiang Tu

Pin Cheng Chen

An EUV radiation source apparatus includes an EUV source vessel including a chamber; a crucible disposed in the chamber; a tin layer disposed on the crucible; a catcher disposed in the chamber and configured to collect fuel debris generated from a collision of the tin layer and a laser beam; a heat dissipation structure disposed over the catcher; and a venting system coupled to the EUV source vessel and communicable with the chamber. A method for generating EUV radiation includes: collecting fuel debris on a catcher disposed in a chamber of an EUV source vessel; dissipating heat from the catcher to the chamber; and venting a gas out of the EUV source vessel to cool the chamber to a decreased temperature through an opening disposed on the EUV source vessel.

Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, and method for generating extreme ultraviolet radiation

An inspection apparatus includes: an inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to emit a first radiation beam for inspecting the photomask; and an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop.

Photomask inspection method and apparatus thereof

The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.

Photomask, method of fabricating a photomask, and method of fabricating a semiconductor structure using a photomask

A method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

Apparatus for fabricating a semiconductor device and method for fabricating semiconductor device

A dis-pellicle tool or pellicle removal tool that includes one or more clamp structures that each include a respective group of pins. The respective pins of the groups of pins of the one or more clamp structures are configured to, in operation, be inserted into holes that are present within a pellicle frame of a pellicle. Once the respective pins of the groups of pins are inserted into the holes of the pellicle frame, a removal force may be applied to the pellicle frame to remove the pellicle from a photomask to which the pellicle is coupled to by an adhesive, glue, or some other similar type of coupling material.

Pellicle, pellicle removal tool, and method of utilizing pellicle and pellicle removal tool

A cleaning apparatus for cleaning a surface of a photomask includes a housing defining a chamber, a photomask holder disposed within the chamber, and a gas dispenser disposed within the chamber to direct gas toward the photomask holder. The gas dispenser has two or more gas dispensing outlets. A driver is coupled to at least one of the photomask holder or the gas dispenser to establish relative movement between the photomask holder and the gas dispenser.

Cleaning apparatus for cleaning surface of photomask

The present disclosure provides a method for removing particles. The method includes: receiving a pellicle including a pellicle membrane, wherein a particle is disposed on the pellicle membrane; passing a light beam through an object lens, wherein the light beam is focused on a focal region in front of the pellicle membrane by the object lens, and the particle is attracted to be trapped at the focal region; and removing the particle from the pellicle membrane at the focal region.

Method for removing particles from pellicle and photomask

A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.

Particle prevention method in reticle pod

A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Cleaning method, method for forming semiconductor structure and system thereof

A photomask cleaning tool includes various components to automatically remove a particle from a pellicle, such as a multi-jet nozzle to standardize and control the use of a gas to remove the particle, an ultrasonic probe to loosen the particle from the surface of the pellicle, a plurality of multi-jet nozzles to direct gas toward the particle from different directions, a control system to control the automated blower for various sizes and shapes of photomasks and for optimized particle removal techniques, and/or the like. In this way, the photomask cleaning tool is capable of removing a particle from a pellicle of a photomask in a manner that increases the effectiveness of removing the particle and reduces the likelihood of damage to the pellicle, which would otherwise result in expensive and time-consuming photomask rework.

Photomask cleaning tool

An inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to inspect the photomask; a mirror configured to direct a first radiation beam from the radiation source to the photomask at a first tilt angle; an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop; and a detector configured to generate an image of the photomask according to the second radiation beam.

The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

A method for removing particles includes receiving a pellicle including a pellicle membrane, a pellicle frame and at least a particle disposed on the pellicle membrane, generating light beams to form an optical trap extending in a direction perpendicular to the pellicle membrane, and removing the particle from the pellicle membrane by the optical trap.

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

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Tainan, Taiwan

Chih-Wei Wen