Phison Electronics Corporation

Other

Himax Technologies, Inc.

Himax Analogic, Inc.

Chih-Wei Wang

Wei Hung Lin

Shih-Jia Zeng

Po-Cheng Su

Yu-Cheng Hsu

Chun-Wei Tsao

Chen Yang Tang

Chen-An Hsu

Shih-Wei Chao

Chien-Chuan Chung

The present disclosure provides a memory management method, a memory storage apparatus and a memory control circuit unit. The method includes: performing a first operation on a plurality of physical units to obtain a quality estimation parameter corresponding to the physical units; establishing a check list according to the quality estimation parameter, wherein the check list records index information of a first physical unit among the physical units, and a number of the first physical unit is less than a total number of the physical units; and in response to a default condition being satisfied, performing a status scanning on the first physical unit according to the index information in the check list.

Memory management method, memory storage apparatus and memory control circuit unit

An exemplary embodiment of the invention provides a read voltage control method for a rewritable non-volatile memory module. The method includes: sending a first read command sequence which instructs a reading of a plurality of first memory cells by using a first voltage level to obtain first data; obtaining first adjustment information of a read voltage according to the first data and a channel parameter of the first memory cells, and the channel parameter reflects a channel status of the first memory cells; and adjusting a voltage level of the read voltage from the first voltage level to a second voltage level according to the first adjustment information.

Read voltage control method, memory storage device and memory control circuit unit

A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: receiving a read command from a host system; in response to a first physical erasing unit being a first type physical unit, sending a first operation command sequence to instruct a rewritable non-volatile memory module to read a first physical programming unit based on a first electronic configuration; and in response to the first physical erasing unit being a second type physical unit, sending a second operation command sequence to instruct the rewritable non-volatile memory module to read the first physical programming unit based on a second electronic configuration. The first electronic configuration is different from the second electronic configuration.

Memory control method, memory storage device, and memory control circuit unit

A read disturb checking method, a memory storage device, and a memory control circuit unit are provided. The method includes: updating first and second read counts of a first physical unit group according to a total read count of a read operation performed on physical programming units in the first physical unit group; scanning at least one first physical programming unit in a currently read physical erasing unit in response to determining the first read account is greater than a first read count threshold to obtain a first error bit amount; scanning all physical programming units in at least one first physical erasing unit in the first physical unit group in response to determining the second read account is greater than a second read count threshold to obtain a second error bit amount; performing a read disturb prevention operation according to the first or second error bit amount.

Read disturb checking method, memory storage device and memory control circuit unit

An embodiment of the present invention discloses a voltage amplifier circuit which includes a signal generator, a mixer and an amplifier. The signal generator is arranged to generate an input signal; the mixer is arranged to mix the input signal with an analog signal to generate an intermediate input signal having a first voltage range; and the amplifier is arranged to convert the intermediate input signal into an output signal having a second voltage range in a Rail-to-Rail manner, wherein the second voltage range is larger than the first voltage range.

Voltage amplifier circuit and associated amplifying method for flexible waveform adjustment

An armrest assembly includes an adjusting seat received in a base slideable in a length direction. The adjusting seat is slideable in a width direction relative to a seat fixed to the base. A first control button initially engaged with the adjusting seat can be operated to disengage from the adjusting seat and to disengage a transverse positioning block from the seat, allowing adjustment in the length and width directions. A lower rod is fixed to a chair body and is received in an upper rod movable in a height direction. A second control button is mounted in a window in the upper rod and includes engagement teeth engaged with a gear on a screw rod in threading connection with a screw rod coupling seat on the lower rod. The second control button can be operated to disengage the engagement teeth from the gear, allowing adjustment in the height direction.

Growing community of inventors

Tainan, Taiwan

Chih-Wei Wang