United Microelectronics Corp.

Lustrous Electro-optic Co., Ltd.

Skymedi Corporation

Chih-Wei Tsai

Yu-Tse Kuo

Chun-Yen Tseng

Chun-Hsien Huang

Shu-Ru Wang

Ching-Cheng Lung

Hsin-Chih Yu

Cheng-Tung Huang

Yi-Ting Wu

Jen-Yu Wang

Chang-Hung Chen

Yung-Ching Hsieh

Jian-Jhong Chen

Po-Chun Yang

Chung-Cheng Tsai

Chuang Cheng

Fu-Ja Shone

Bo-Chang Li

Ya-Lan Chiou

Jhen-Siang Wu

Wen-Lin Chang

Tsan-Tang Chen

Yen-Hsueh Huang

Chang-Ting Lo

Jun-Yu Chung

Satashi Sugawa

A memory includes (n&#x2212;1) non-volatile cells, (n&#x2212;1) bit lines and a current driving circuit. Each of the (n&#x2212;1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n&#x2212;1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n&#x2212;1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n&#x2212;1) non-volatile cells.

Memory including non-volatile cells and current driving circuit

A ternary content addressable memory unit includes a first inverter, a second inverter, a third inverter, a fourth inverter, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The first inverter includes an input terminal, and an output terminal coupled to a first node. The second inverter includes an input terminal coupled to the first node and an output terminal coupled to the input terminal of the first inverter. The third inverter includes an input terminal coupled to a second node and an output terminal. The fourth inverter includes an input terminal coupled to the output terminal of the third inverter and an output terminal coupled to the second node.

Ternary content addressable memory unit capable of reducing charge sharing effect

An SRAM device includes a memory cell and a keeper circuit. The memory cell is formed in an active area and coupled to a first bit line and a second bit line. The keeper circuit is formed in the active area and configured to charge the second bit line when the first bit line is at a first voltage level and the second bit line is at a second voltage level or charge the first bit line when the second bit line is at the first voltage level and the first bit line is at the second voltage level, wherein the second voltage level is higher than the first voltage level.

Static random access memory device with keeper circuit

The present invention provides a six transistor static random-access memory (6T-SRAM) cell, the 6T-SRAM cell includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, and a first storage node, a second inverter comprising a second pull-up transistor, a second pull-down transistor, and a second storage node, wherein the first storage node is coupled to gates of the second pull-up transistor and the second pull-down transistor, a switch transistor configured to couple the second storage node to gates of the first pull-up transistor and the first pull-down transistor, and an access transistor coupled to gates of the first pull-up transistor and the first pull-down transistor.

Six-transistor static random access memory cell and operation method thereof

A method of capturing images includes the following steps of: providing a camera module including an image capture unit, a liquid lens unit, and an image process unit; capturing a clear image through the camera module; enlarging the camera's relative aperture to create a shallow depth-of-field; adjusting the focal plane of the liquid lens unit to analyze object depth information in the clear image; and adding or storing the depth information of the object to the clear image.

Method of capturing images and obtaining information of the images

A fingerprint reading system includes a camera module, a control module, and a signal processing module. The camera module has a detection unit, an image capture unit, a liquid lens unit, and an illumination unit. Control module is electrically connected to camera module for controlling the internal components of camera module. When the detection unit detects a start signal, the control module activates the image capture unit, liquid lens unit, and illumination unit. The liquid lens unit adjusts the focus distance across an entire scanning region and scans fingerprint. The image capture unit adjusts the focus distance across the entire scanning region through the liquid lens unit and scans fingerprint to capture multiple photos. The signal processing module selects the sharpest photo from the multiple photos to convert to a fingerprint image.

Fingerprint reading system

A liquid lens package structure includes a first light-transmitting element, a second light-transmitting element, a first elastic surrounding body, a second elastic surrounding body and a package unit. The first elastic surrounding body is disposed between the first and the second light-transmitting elements to form an enclosed space among the first light-transmitting element, the second light-transmitting element and the first elastic surrounding body for receiving and enclosing two unmingled predetermined liquids. The second elastic surrounding body is disposed on the second light-transmitting element. The package unit includes a first retaining seat and a second retaining seat mated with each other. The first retaining seat has a first opening, and the second retaining seat has a second opening. The first light-transmitting element, the first elastic surrounding body, the second light-transmitting element and the second elastic surrounding body are stacked sequentially between the first and the second retaining seats.

Liquid lens package structure

A non-volatile memory system and a method for reading data therefrom are provided. The data comprises a first sub-data and a second sub-data. The non-volatile memory system comprises a first storage unit and a second storage unit, adapted for storing the two sub-data respectively. The first storage unit reads a first command from the controller, and stores the first sub-data temporarily as the first temporary sub-data according to the first command. The second storage unit reads a second command from the controller, and stores the second sub-data temporarily as the second temporary sub-data according to the second command. The first temporary sub-data is read from the first storage unit. Then, the first storage unit reads a third command from the controller. The second temporary sub-data is also read from the second storage unit while reading the third command. The time for reading data from the non-volatile memory system is reduced.

Non-volatile memory system and method for reading and storing sub-data during partially overlapping periods

Growing community of inventors

Hsinchu, Taiwan

Chih-Wei Tsai