Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih Wei Sung

Keng-Ying Liao

Yen-Jou Wu

Chi-Chung Jen

Yu-Chu Lin

Su-Yu Yeh

Po-Zen Chen

Huai-Jen Tung

Po-zen Chen

Yu-chien Ku

Ching-Chung Su

Huai-jen Tung

Chung-Bin Tseng

S S Wang

H L Chen

Yu-Chien Ku

Yung-Lung Yang

Shih Sian Wang

Tsun-kai Tsao

A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Image sensor device and methods of forming the same

A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

BSI chip with backside alignment mark

In a method for forming a semiconductor device photo-sensing regions are formed over a frontside of a substrate. A first layer is formed over a backside of the substrate and is patterned to form a plurality of grid lines. The grid lines can define a plurality of first areas and a plurality of second areas. A second layer may be formed over exposed portions of the backside, the gridlines, the first areas, and the second areas and a third layer may be formed over the second layer. The second and third layer may have different etch rates and the third layer is pattern so as to remove the third layer from over the plurality of first areas.

Image sensor grid and method of manufacturing same

A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.

Methods for forming image sensor devices

In a method for forming a semiconductor device photo-sensing regions are formed over a frontside of a substrate. A first layer is formed over a backside of the substrate and is patterned to form a plurality of grid lines. The grid lines can define a plurality of first areas and a plurality of second areas. A second layer maybe formed over exposed portions of the backside, the gridlines, the first areas, and the second areas and a third layer may be formed over the second layer. The second and third layer may have different etch rates and the third layer is pattern so as to remove the third layer from over the plurality of first areas.

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Kaohsiung, Taiwan

Chih Wei Sung