Nan Ya Technology Corporation

Chih-Wei Shen

Ting-Shuo Hsu

A memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector. The input pad is configured to receive an input voltage. The first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank. The second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.

Memory device

The memory apparatus includes a plurality of memory chips and a plurality of temperature sensors. The memory chips are coupled to each other. The temperature sensors are respectively disposed on the memory chips. One of the memory chips is configured to be a master memory chip, and a first temperature sensor of the master memory chip is enabled to sense an ambient temperature. The master memory chip generates a refresh rate control signal according to the ambient temperature and controls refresh rates of all of the memory chips.

Memory apparatus and refresh method thereof

A post package repair (PPR) method is disclosed. The PPR method includes the following operations: receiving a first PPR signal and a second PPR signal, in which the first PPR signal corresponds to a first PPR mode, and the second PPR signal corresponds to a second PPR mode; generating a first valid signal and a second valid signal according to the first PPR signal and the second PPR signal, in which only one of the first valid signal and the second valid signal comprises a valid information when both of the first PPR signal and the second PPR signal comprise an enabled information; in which when the first valid signal comprises the valid information, the first PPR mode is executed, and when the second valid signal comprises the valid information, the second PPR mode is executed.

Post package repair method and post package repair device

A voltage switching device, an integrated circuit device, and a voltage switching method are provided. The voltage switching device includes a reference voltage generator generating a first reference voltage and a second reference voltage, a fuse system coupled to a circuit device, and a switch circuit coupled to the reference voltage generator, the fuse system, and the circuit device. The fuse system generates a first enable signal and a second enable signal according to an input signal from a circuit device. The switch circuit transmits the first reference voltage or the second reference voltage to the circuit device according to the first enable signal and the second enable signal from the fuse system.

Voltage switching device, integrated circuit device and voltage switching method

The present disclosure provides a dynamic random access device (DRAM). The DRAM includes a first node, a second node and a pad. The first node is configured to conduct a first internal signal generated by internal devices of the DRAM. The second node is configured to conduct a second internal signal generated by other internal devices of the DRAM. The pad is configured to receive one of the first internal signal and the second internal signal.

DRAM and method of designing the same

A fuse blowing method is disclosed. The fuse blowing method comprises the following operations: detecting a plurality of voltages of a plurality of word lines; sending an enabling signal to a fuse circuit when one of the voltages is below a voltage threshold, in which the one of the voltages corresponds to one of the word lines; and blowing a fuse, in which the fuse is connected to the one of the word lines, such that the one of the voltages is higher than the voltage threshold.

Growing community of inventors

Yunlin County, Taiwan

Chih-Wei Shen