Macronix International Co., Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Wistron Corporation

Quanta Computer Incorporated

Mitac Computing Technology Corporation

Phytrex Technology Corporation

Other

Compal Electronics, Inc.

Jabil Circuit (singapore) Pte. Ltd.

Goodrich Plus Energy Technology Ltd.

Chih-Wei Lee

Shaw-Hung Ku

Cheng-Hsien Cheng

Jo-Chun Hung

Kuo-Feng Yu

Wen-Hung Huang

Atsuhiro Suzuki

Wen-Jer Tsai

Jian-Hao Chen

Chien-Yuan Chen

Wei-Hsuan Chang

Wen-Pin Lu

Chen-Yu Chou

Chi On Chui

Shih-Hao Lin

Cheng-Lung Hung

Chih-Chuan Yang

Yu-Kuan Lin

Kian-Long Lim

Chia-Hao Pao

Chia-Wei Chen

Yin-Yu Chen

Shyh-Tirng Fang

Shih-Wei Hsieh

Yung-Hsiang Chan

Hsin-Han Tsai

Zoe Chen

Hsueh-Ju Chen

Cheng-Han Lee

Chih-Wei Kao

Yi-Lun Li

Chin-Fen Cheng

Cheng-Cheng Lee

Chien-Hung Liu

Weng Chang

Hui-Chi Chen

Chun-Fai Cheng

Lien Jung Hung

Lien-Jung Hung

Jyun-Siang Huang

Kuan-Chung Chen

Ta-wei Lin

Li-Yu Chen

Yeh-Chun Kao

Liang-Yi Chen

Chih-Yu Hsu

Ting-Wei Kang

Tien-Fan Ou

Kuan Fu Chen

Ta-Hui Wang

Yu-Hung Huang

Chang-Hsin Lai

Shuo-Hung Hsu

Chia-Ying Chen

Ya Jui Lee

Shao-Yu Huang

Ming-Feng Tsai

Shih-Huei Liu

Cheng-Hsun Lee

Chih-Wei Chiu

Hsiang-Ju Liao

Jiao-Hao Chen

Chi-An Wang

Che-Chuan Hu

Po-Hsun Hu

Chung-Ta Huang

Te-Sheng Wang

Ta-Jen Kao

Hsiang-Chun Yang

Ping-Huei Lee

Er-Jie Tsai

Feng-Chi Hsiao

Kun-Shan Yang

Tung-Fu Lin

A method includes steps of: storing an entry of sensing data in a storage area of a storage module of a board management controller as sensor data; assigning a buffer area of the storage module with a locked state; copying the sensor data from the storage area to the buffer area; and assigning the buffer area with an unlocked state. A processing module of the board management controller does not respond to a request to access the sensor data when the buffer area is assigned with the locked state, and responds to the request to access the sensor data when the buffer area is assigned with the unlocked state.

Board management controller and method for storing sensor data in board management controller

Ruthenium of a metal gate (MG) and/or a middle end of line (MEOL) structure is annealed to reduce, or even eliminate, seams after the ruthenium is deposited. Because the annealing reduces (or removes) seams in deposited ruthenium, electrical performance is increased because resistivity of the MG and/or the MEOL structure is decreased. Additionally, for MGs, the annealing generates a more even deposition profile, which results in a timed etching process producing a uniform gate height. As a result, more of the MGs will be functional after etching, which increases yield during production of the electronic device.

Techniques for semiconductor gate and contact formation to reduce seam formation

A method includes providing a structure having a first stack of nanostructures spaced vertically one from another and a second stack of nanostructures spaced vertically one from another, forming a dielectric layer wrapping around each of the nanostructures in the first and second stacks, depositing an n-type work function layer on the dielectric layer and a p-type work function layer on the n-type work function layer and over the first and second stacks. The n-type work function layer wraps around each of the nanostructures in the first stack. The p-type work function layer wraps around each of the nanostructures in the second stack. The method also includes forming an electrode layer on the p-type work function layer and over the first and second stacks.

Metal gates for multi-gate semiconductor devices and method thereof

A wireless communication device is provided. The wireless communication device includes a circuit board, an antenna module, a housing and a metal pattern unit. The antenna module is coupled to the circuit board, wherein the antenna module transmits a wireless signal, the antenna module defines a first FOV area and a second FOV area, and the first FOV area differs from the second FOV area. The housing covers the antenna module, wherein a lid portion of the housing corresponds to the first FOV area, and the lid portion has a first equivalent dielectric constant. The metal pattern unit corresponds to the second FOV area, the metal pattern unit causes a second equivalent dielectric constant, and the first equivalent dielectric constant differs from the second equivalent dielectric constant.

Wireless communication device

A semiconductor device structure and a formation method are provided. The method includes forming a fin structure over a substrate, and the fin structure has multiple sacrificial layers and multiple semiconductor layers laid out alternately. The method also includes removing the sacrificial layers to release multiple semiconductor nanostructures made up of remaining portions of the semiconductor lavers. The method further includes forming a gate dielectric layer to wrap around the semiconductor nanostructures and forming a first metal-containing layer over the gate dielectric layer to wrap around the semiconductor nanostructures. In addition, the method includes introducing oxygen-containing plasma on the first metal-containing layer to transform an upper portion of the first metal-containing layer into a metal oxide layer. The method includes forming a second metal-containing layer over the metal oxide layer.

Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process

A method for evaluating radio performance of a device under test (DUT) comprises the following steps. A first set of points, a second set of points and a third set of points are defined to locate on a sphere surrounding the DUT. A signal power of the DUT is evaluated at the first set of points to identify a first region related to the first set of points. Candidates of the second set of points are selected based on the first region. The signal power of the DUT is evaluated at the candidates of the second set of points to identify a second region related to the second set of points. Candidates of the third set of points are selected based on the second region. The signal power of the DUT is evaluated at the candidates of the third set of points to identify a beam peak.

Method and system for evaluating radio performance

A multiband antenna array is provided. The multiband antenna array includes a first multi-band antenna unit, a first high band antenna member, and a first low band antenna member. The first multi-band antenna unit includes a first high band antenna element and a first low band antenna element. A first distance is formed between the center of the first multi-band antenna unit and the center of the first high band antenna member. The first distance is 0.3˜0.8 times the wavelength of a high band signal. A second distance is formed between the center of the first multi-band antenna unit and the center of the first low band antenna member. The second distance is 0.3˜0.8 times the wavelength of a low band signal.

Multiband antenna array

An autonomously activated electric energy storage device and a control method thereof are provided. The autonomously activated electric energy storage device includes a first battery cell, a second battery cell, a temperature detector, a first bidirectional charger, a second bidirectional charger and a control circuit. When the control circuit determines through the temperature detector that a battery cell temperature is equal to or lower than a low working temperature limit, the control circuit allows the first bidirectional charger to be electrically conducted with the first battery cell and the second bidirectional charger to be electrically conducted with the second battery cell, and the first battery cell and the second battery are controlled to perform power transfer therebetween through the first and the second bidirectional charger until temperatures of the first battery cell and the second battery cell are both higher than the low working temperature limit.

Autonomously activated electric energy storage device and control method thereof

An n-type field effect transistor includes semiconductor channel members vertically stacked over a substrate, a gate dielectric layer wrapping around each of the semiconductor channel members, and a work function layer disposed over the gate dielectric layer. The work function layer wraps around each of the semiconductor channel members. The n-type field effect transistor also includes a WF isolation layer disposed over the WF layer and a gate metal fill layer disposed over the WF isolation layer. The WF isolation layer fills gaps between adjacent semiconductor channel members.

Metal gates for multi-gate devices and fabrication methods thereof

A semiconductor device includes a first transistor located in a first region of a substrate and a second transistor located in a second region of the substrate. The first transistor includes first channel members vertically stacked above the substrate and a first gate structure wrapping around each of the first channel members. The first gate structure includes a first interfacial layer. The second transistor includes second channel members vertically stacked above the substrate and a second gate structure wrapping around each of the second channel members. The second gate structure includes a second interfacial layer. The second interfacial layer has a first sub-layer and a second sub-layer over the first sub-layer. The first and second sub-layers include different material compositions. A total thickness of the first and second sub-layers is larger than a thickness of the first interfacial layer.

Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same

The invention provides an antenna subsystem with improved radiation performances. The antenna subsystem may comprise an antenna-in-module (AiM), an auxiliary structure being conductive, and a support structure being nonconductive and disposed between the AiM and the auxiliary structure. The AiM may comprise a base, and one or more radiators being conductive. The antenna subsystem may provide a spherical coverage by a combination of a first component of gain and a second component of gain. The auxiliary structure may be insulated from the one or more radiators, and may be configured for orienting a radiation pattern of the first component of gain and a radiation pattern of the second component of gain to two different directions respectively; and/or, causing the spherical coverage provided by the antenna subsystem to be broader than a spherical coverage provided by the AiM alone.

Antenna subsystem with improved radiation performances

A communication device for detecting an object includes a power module, an antenna array, a first sensor pad, a second sensor pad, and a control unit. The antenna array is excited by the power module, and is configured to provide a first beam group and a second beam group. The first sensor pad is disposed adjacent to the first side of the antenna array. A first capacitance is formed between the first sensor pad and the object. The second sensor pad is disposed adjacent to the second side of the antenna array. A second capacitance is formed between the second sensor pad and the object. The control unit controls the power module according to the first capacitance and the second capacitance, so as to selectively apply at least one power backoff operation to the first beam group and/or the second beam group.

Communication device and communication method

A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Semiconductor device structure and method for forming the semiconductor device structure

A semiconductor device and related method for forming a gate structure. In some embodiments, a semiconductor device includes a fin extending from a substrate. In some cases, the fin includes a plurality of semiconductor channel layers. In some examples, the semiconductor device further includes a gate dielectric surrounding each of the plurality of semiconductor channel layers. In some embodiments, a first thickness of the gate dielectric disposed on a top surface of a topmost semiconductor channel layer of the plurality of semiconductor channel layers is greater than a second thickness of the gate dielectric disposed on a surface of another semiconductor channel layer disposed beneath the topmost semiconductor channel layer.

Gate structure for multi-gate device and related methods

The invention provides method and apparatus augmenting functionality of an antenna-in-module (AiM) of a user equipment (UE) to proximity detection (and more) besides wireless communication. The AiM may comprise a radiator set and a channel circuit set. The radiator set may comprise one or more radiators, and the channel circuit set may comprise one or more channel circuits. The method may comprise: causing a first subset of the channel circuit set to transmit outgoing electromagnetic (EM) waves by circular polarization of a first rotation sense, causing a second subset of the channel circuit set to receive incoming EM waves by circular polarization of a second rotation sense different from the first rotation sense, accordingly obtaining one or more received detection signals, and executing the proximity detection according to the one or more received detection signals.

Method and apparatus augmenting functionality of antenna-in-module of user equipment to proximity detection besides wireless communication

Growing community of inventors

Taipei, Taiwan

Chih-Wei Lee