Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Chih-Wei Lai

Chien Rhone Wang

Henry Lo

Kewei Zuo

Jean Wang

Francis Ko

Chen-Hua Douglas Yu

Chung-Shi Liu

Hung-Jui Kuo

Ming-Che Ho

Tzu-Yu Wang

Ping-Hsu Chen

Tzong-Hann Yang

Chia-Tung Chang

Chun-Hsien Lin

Tzu-Cheng Lin

Jung Cheng Ko

Amy Wang

Jing-Cheng Lin

Chih-Chiang Chang

Tsang-Jiuh Wu

Hung-Pin Chang

Yuan-Shuo Chang

Yu-Jen Cheng

Yi-Chang Shih

Chi-Chun Hsieh

Kuan Teng Lo

Chun-Hsien Lim

An apparatus for use in a polar transmitter to perform distortion estimation and compensation is provided. The apparatus includes a mixing unit, a signal processing unit, an estimation unit and a compensation unit. The mixing unit is configured to mix a test output signal and a frequency down-converting signal to generate a mixed signal. The processing unit is configured to perform signal processing on the mixed signal to generate a processed signal. The estimation unit is configured to perform distortion estimation on the processed signal to generate a distortion estimation result. The compensation unit is configured to perform pre-distortion compensation on input signals of the polar transmitter according to the distortion estimation result.

Method and apparatus for use in polar transmitter to perform nonlinear distortion estimation and compensation

A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.

Clustering for prediction models in process control and for optimal dispatching

Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.

Near non-adaptive virtual metrology and chamber control

A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

Adjusting sizes of connectors of package components

Packaging methods, material dispensing methods and apparatuses, and automatic measurement systems are disclosed. In one embodiment, a method of packaging semiconductor devices includes coupling a second die to a top surface of a first die, dispensing a first amount of underfill material between the first die and the second die, and capturing an image of the underfill material. Based on the image captured, a second amount or no additional amount of underfill material is dispensed between the first die and the second die.

Packaging methods, material dispensing methods and apparatuses, and automated measurement systems

A system and method is disclosed for a quality control and/or inspection procedure for assembly line processes. The disclosed system and method enable automatic optical inspection of a device during different stages of manufacture as well as in its finished form. The disclosed system and method enable the automatic quality control process to be self-learning, dynamic, and to identify and classify defects in real time.

System and method for automatic quality control for assembly line processes

A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.

Automatic virtual metrology for semiconductor wafer result prediction

Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.

Apparatus and methods for end point determination in reactive ion etching

A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.

Method and system for controlling copper chemical mechanical polish uniformity

A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

Auto routing for optimal uniformity control

A method of monitoring uniformity of a wafer is provided. A wafer parameter is selected. Manufacturing data is collected. The manufacturing data includes measurements of the selected wafer parameter. An average offset profile of the wafer parameter for a first and second wafer is determined using the manufacturing data. The first and second wafer are associated with a product type and were processed by a processing tool. An offset profile for a third wafer is predicted for a wafer using the average offset profile. The third wafer is associated with the product type and was processed by the processing tool.

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Hsin-Chu, Taiwan

Chih-Wei Lai