Industrial Technology Research Institute

Academia Sinica

Chih-Wei Chu

Jing-Yi Yan

Chao-Kai Cheng

Yuh-Zheng Lee

Chao-Feng Sung

Liang-Hsiang Chen

Ming-Chou Chen

Shiau-Shin Cheng

Yo-Chi Liang

Xiu Zhang

The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2',3&#x2032;-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2&#x2032;,3&#x2032;-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.

Organic semiconductor compounds

A transistor includes a first semiconductor layer associated with a first electrode; a second semiconductor layer associated with a second electrode; and a discontinuous layer between the first and second semiconductor layer. The discontinuous layer has a plurality of openings being formed on a non-uniform organic surface. Applications of the transistor include an inverter that operates at low supply voltage and high frequency.

Organic transistor inverter

A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.

Transistor-type pressure sensor and method for fabricating the same

Growing community of inventors

Taipei, Taiwan

Chih-Wei Chu