Amazing Microelectronic Corporation

Delta Electronics, Inc.

Superd Co. Ltd.

Htc Corporation

Solteam Electronics Co., Ltd.

Solteam Electronics (dong Guan) Co., Ltd.

Solteam Electronics (su Zhou) Co., Ltd.

Amazing Microelectronics Corp.

Shenzhen Super Perfect Optics Limited

Chih-wei Chen

Kun-Hsien Lin

Chen-Hsien Chang

Feng-Pin Hsu

Jian-Jun Li

Yi-Pai Huang

Po-Chuan Chen

Mei-Lian Fan

Hsi-Hsing Hsu

Ying-Sung Ho

Kuan-Yu Lin

Yu-Shu Shen

Chi-Meng Phang

Che-Kai Lin

Hung-Chi Shui

Chien-Man Chen

Shan-Chin Chang

Syuan Li

Backplane for servo motor drive

A bidirectional electrostatic discharge protection device includes at least one bipolar junction transistor and at least one silicon-controlled rectifier. The silicon-controlled rectifier is coupled to the bipolar junction transistor in series. The absolute value of the breakdown voltage of the bipolar junction transistor is lower than that of the silicon-controlled rectifier and the absolute value of the holding voltage of the bipolar junction transistor is higher than that of the silicon-controlled rectifier when an electrostatic discharge voltage is applied to the bipolar junction transistor and the silicon-controlled rectifier.

Bidirectional electrostatic discharge (ESD) protection device

A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Transient voltage suppression device

Control module for servo motor drive

Drive module for servo motor drive

Power module for servo motor drive

A bidirectional electrostatic discharge protection device and a method for fabricating the same is disclosed. The protection device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, a heavily-doped area, and a lightly-doped area. The substrate, the heavily-doped area, and the lightly-doped area have a first conductivity type and the epitaxial layers have a second conductivity type. The first semiconductor epitaxial layer and the second semiconductor epitaxial layer are sequentially formed on the substrate, and the heavily-doped area and the lightly-doped area are formed in the second semiconductor epitaxial layer. The lightly-doped area covers the corner of the heavily-doped area, and the breakdown voltage of a junction between the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer corresponds to the breakdown voltage of a junction between the second semiconductor epitaxial layer and the heavily-doped area.

A vertical transient voltage suppression device includes a semiconductor substrate having a first conductivity type, a first doped well having a second conductivity type, a first heavily-doped area having the first conductivity type, a second heavily-doped area having the first conductivity type, and a diode. The first doped well is arranged in the semiconductor substrate and spaced from the bottom of the semiconductor substrate, and the first doped well is floating. The first heavily-doped area is arranged in the first doped well. The second heavily-doped area is arranged in the semiconductor substrate. The diode is arranged in the semiconductor substrate and electrically connected to the second heavily-doped area through a conductive trace.

Vertical transient voltage suppression device

A transient voltage suppression device with improved electrostatic discharge (ESD) robustness includes a semiconductor substrate having a first conductivity type, a first doped well having a second conductivity type, a first heavily-doped area having the first conductivity type, a second doped well having the second conductivity type, a second heavily-doped area having the first conductivity type, and a first current blocking structure. The first doped well is arranged in the semiconductor substrate. The first heavily-doped area is arranged in the first doped well. The second doped well is arranged in the semiconductor substrate. The second heavily-doped area is arranged in the second doped well. The first current blocking structure is arranged in the semiconductor substrate, spaced from the bottom of the semiconductor substrate, and arranged between the first doped well and the second doped well.

Transient voltage suppression device with improved electrostatic discharge (ESD) robustness

A bidirectional silicon-controlled rectifier includes a lightly-doped semiconductor structure, a first lightly-doped region, a second lightly-doped region, a first doped well, a second doped well, a first heavily-doped area, a second heavily-doped area, a third heavily-doped area, a fourth heavily-doped area. The lightly-doped semiconductor structure, the first heavily-doped area, and the third heavily-doped area have a first conductivity type. The first lightly-doped region, the second lightly-doped region, the first doped well, the second doped well, the fourth heavily-doped area, and the second heavily-doped area have a second conductivity type. A first part of the first lightly-doped region is arranged under the first doped well. A second part of the second lightly-doped region is arranged under the second doped well.

Bidirectional silicon-controlled rectifier

A method of fabricating a housing includes: providing a metal member including a base plate and a sidewall, the base plate having an inner surface connected to the sidewall; providing a filler having a connecting surface and a first top surface; fixing the filler onto the metal member to make the connecting surface connect to the inner surface and the first top surface to respectively form first and second included angles larger than 90 degrees and smaller than 180 degrees; providing a film attached with an ink layer, and then performing a process of In-Mold-Roller Injection Molding to form a plastic on the sidewall and the filler, the ink layer attached to the plastic; and removing a part of the filler and a part of the plastic at the sidewall to form a machined surface connected to the inner surface and the upper appearance surface.

Method of fabricating housing and housing

Differing from the conventional rotary switches, a rotary switch provided by the present invention is design to perform bidirectional rotation by double shaft, such that this rotary switch has the maximum switching levels of 32. Particularly, two retaining members having a spring accommodating trough are adopted for accommodating the compression springs; therefore, when switching the rotary switch from one switching level to another one switching level, each the retaining member does ensured to fully embed into one of the rotary grooves formed around the disk side edge of the corresponding rotary disks; the reason is that the compression springs suffer to pressing force would not bend during switching the novel rotary switch, such that the functions of the electric product can be switch smoothly and completely.

Rotary switch

The present disclosure provides a liquid crystal lens, a controlling method thereof and a 3D display using the same. The liquid crystal lens includes a pair of electrode structures which are arranged apart from each other; and a liquid crystal layer which is arranged between the pair of electrode structures and includes a plurality of liquid crystal molecules aligned in an initial aligning direction in which the liquid crystal layer has a non-lens effect. The pair of electrode structures are arranged to generate a first electric field which is used to change aligning directions of the liquid crystal molecules to make the liquid crystal layer have a lens effect. The pair of electrode structures are further arranged to generate a second electric field which is used to make the liquid crystal molecules revert to the initial aligning direction.

Liquid crystal lens, controlling method thereof and 3D display using the same

The present disclosure provides a liquid crystal lens, a controlling method thereof and a 3-Dimensional (3D) display using the same. The liquid crystal lens includes a pair of electrode structures which are arranged apart from each other; and a liquid crystal layer which is arranged between the pair of electrode structures and includes a plurality of liquid crystal molecules aligned in an initial aligning direction in which the liquid crystal layer has a non-lens effect. The pair of electrode structures are arranged to generate a first electric field which is used to change aligning directions of the liquid crystal molecules to make the liquid crystal layer have a lens effect. The pair of electrode structures are further arranged to generate a second electric field which is used to make the liquid crystal molecules revert to the initial aligning direction.

An exemplary stereo display apparatus includes a pixel array and a lens array. The pixel array includes a plurality of pixel units arrayed in parallel rows and parallel columns. The lens array covers the pixel array, and includes a plurality of lenticular lens units arrayed in said rows and columns. The lenticular lens units are parallel to each other, and the adjacent lenticular lens units arrayed in columns have a stagger arrangement along a first direction along which the pixel units are arrayed in rows, thereby the adjacent lenticular lens units arrayed in columns are arranged in terraced steps.

Growing community of inventors

Taoyuan, Taiwan

Chih-wei Chen