Nan Ya Technology Corporation

Winbond Electronics Corporation

Promos Technologies, Inc

Chih Wei Chen

Chien-Min Lee

Wei-Su Chen

Ming-Jinn Tsai

Yi-Chan Chen

Hong-Hui Hsu

Der-Sheng Chao

A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Phase change memory device and method for fabricating the same

Growing community of inventors

Miaoli County, Taiwan

Chih Wei Chen