Au Optronics Corporation

Lextar Electronics Corporation

Alpha Networks Inc.

Au Optrinics Corp.

Chih-Wei Chao

Chien-Sen Weng

Kuo-Lung Fang

Chia-Tien Peng

Ming-Wei Sun

An-Thung Cho

Kun-Chih Lin

Mao-Yi Chang

Chrong-Jung Lin

Ya-Chin King

Yi-Sheng Cheng

Chao-Shun Liao

Yi-Wei Chen

Feng-Yuan Gan

Chi-Wen Chen

Li-Chung Hsu

Wan-Yi Liu

Chin-Wei Hu

Shih-Chi Lee

Yu-Hsin Kuo

Wen-Jen Chiang

Po-Wei Shih

Wei-Ming Huang

Chun-Hsiun Chen

Chia-Kai Chen

Chih-Yang Chen

A cloud radio access network system includes remote signal sources, a baseband processing unit pool, an access management server, a software defined network controller and a network signal forwarder. Each remote signal source is configured to transmit an access signal. The baseband processing unit pool provides a baseband processing signal. The access management server provides an access state signal. Different maximum transmission rates are transmitted via the access state signal. When the baseband processing unit pool has authenticated one remote signal source, the baseband processing unit pool transmits an authentication notification signal to the access management server. Then, the access management server informs the software defined network controller according to the authentication notification signal to increase an upper limit of a signal transmission rate between the baseband processing unit pool and the authenticated remote signal source to a higher one of the maximum transmission rates.

Cloud radio access network system and control method thereof

A cloud radio access network system includes remote signal sources, a baseband processing unit pool, an access management server, a software defined network controller and a network signal forwarder. The software defined network controller is electrically connected to the access management server and the network signal forwarder. The network signal forwarder includes at least two network connectors, each of which is configured to be connected to one remote signal source or the baseband processing unit pool. The software defined network controller obtains connection relation between the network connectors and the remote signal sources or the baseband processing unit pool, and provides network resource information to the network signal forwarder according to the connection relation. The network signal forwarder establishes communication between one remote signal source and the baseband processing unit pool according to the network resource information.

One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel

A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a gate driver region and a source driver region. Each poly-silicon island disposed on the substrate has a source region, a drain region and a channel region disposed therebetween. The poly-silicon islands include several first poly-silicon islands and several second poly-silicon islands. The first poly-silicon islands having main grain boundaries and sub grain boundaries are only disposed within the display region and the gate driver region. The main grain boundaries of the first poly-silicon islands are only disposed within the source regions and/or the drain regions. The second poly-silicon islands are disposed in the source driver region. Grain sizes of the first poly-silicon islands are substantially different from those of the second poly-silicon islands. Gates corresponding to the channel regions are disposed on the substrate.

Method of fabricating thin film transistor array substrate having polysilicon with different grain sizes

Thin film transistor array substrate having polysilicon

A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Light emitting diode

In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

Fabricating method of light emitting diode chip

A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.

Display device having heating layer and method of making the same

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Method for fabricating light emitting diode chip

An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

Optical reflected touch panel and pixels and system thereof

A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Method for fabricating LED chip comprising reduced mask count and lift-off processing

Method for fabricating lED chip comprising reduced mask count

Growing community of inventors

Hsin-Chu, Taiwan

Chih-Wei Chao