Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

National Science Council

Chih-Tsung Lee

You-Hua Chou

Chen-Ming Huang

Chyi-Tsong Ni

Min Hao Hong

Shiu-Ko JangJian

Kuang-Wei Cheng

Sheng-Chun Yang

Yung-Tsun Liu

Chia-Ho Chen

Ming-Shiou Kuo

Chung-En Kao

Chih-Jen Wu

Miao-Cheng Liao

Ming-Chin Tsai

Yun-Tzu Chiu

Shu-Fen Wu

Chin-Hsiang Lin

Victor Y Lu

Shih-Chi Lin

Yi-Ming Lin

Soon-Kang Huang

Chih-Yuan Yang

Kun-Tai Wu

Chao-Hung Wan

Ming Huei Lien

Chin-Hsiang Chang

Chi-Wen Liu

Keng-Chu Lin

Shing-Chyang Pan

Hsi-Kuei Cheng

Jung-Chih Tsao

Hung Jui Chang

Ming-Yuan Cheng

Wen-Cheng Yang

Hsien-Ping Feng

Ya-Ling Lee

Zih-Shuo Huang

Steven Lin

Min-Hao Hong

Hsiang-Hsiang Ko

Ray Chuang

Sung-Ju Huang

Chen-Chia Chiang

Yi-Wei Tsai

Ko-Chin Chung

Yi-Hung Lin

Tsung-Ying Ke

Keith Kuang-Kuo Koai

Chen-Chi Martin Ma

Kun-Lung Hsieh

Hsiang Hsiang Ko

Lin-Jung Wu

Ming-Chang Hsu

Heng-Chia Hsu

Chih-Chieh Lin

Kun-Mo Lin

Hew-Der Wu

Huan-Wen Lai

Shiu-Ko Jang Jian

Hsueh-Hui Kuo

Ming-Huei Lien

Ting Kang

Kai-Yu Yu

A method of fabricating semiconductor devices includes: loading one or more semiconductor wafers into a plurality of stations provided within a process chamber; applying a process to the semiconductor wafers which deposits a material on the one or more semiconductor wafers within the process chamber; and cleaning the process chamber. Suitably, cleaning the process chamber includes flowing a cleaning gas into the process chamber toward a deflector arranged in the process chamber, the deflector having a first surface upon which the flowed cleaning gas impinges, the first surface directing a first portion of the flowed cleaning gas impinging thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowed cleaning gas impinging thereon in a second trajectory toward a second end of the process chamber, the second end being opposite the first end.

Deflector for chamber cleaning

Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.

Device and methods for chemical vapor deposition

A diaphragm position of a valve may be detected and/or determined such that operation of the diaphragm may be monitored. A sensor included in the valve may generate sensor data that may be used to monitor the position of the diaphragm, which in turn may be used to determine a flow of a fluid through the valve. In this way, the sensor may be used to determine whether the diaphragm is properly functioning, may be used to identify and detect failures of the diaphragm, and/or may be used to quickly terminate operation of an associated deposition tool. This may reduce semiconductor substrate scrap, may reduce device failures on semiconductor substrates that are processed by the deposition tool, may increase semiconductor processing quality of the deposition tool, and/or may increase semiconductor processing yields of the deposition tool.

Semiconductor processing tool and methods of operation

A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Semiconductor processing tool

A display, including a carrying main body, a flexible carrier film, a double-sided tape, and an adhesive layer, is provided. The flexible carrier film includes a first bonding section and a second bonding section respectively disposed on two opposite sides of the carrying main body, and a bending section connected between the first bonding section and the second bonding section. The flexible carrier film has an inner surface and an outer surface opposite to each other. The inner surface has at least one first groove at the bending section. The flexible carrier film has a display layer thereon. At least a part of the display layer is connected to the outer surface at the second bonding section. The double-sided tape is disposed between the first bonding section and the carrying main body. The adhesive layer is disposed between the inner surface and the carrying main body at the bending section.

Display

An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.

Semiconductor fabrication apparatus

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

CVD device pumping liner

A flexible device array substrate includes: a substrate, a metal-containing layer, and an electronic component layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer and a second layer. The first layer is located on a side close to the substrate, and the first layer contains a first metal oxide to form a peeling interface in the first layer. The second layer is located on a side away from the substrate, and the second layer contains a second metal oxide. The oxidation number of the metal in the second metal oxide is smaller than the oxidation number of the metal in the first metal oxide. The electronic component layer is disposed above the metal-containing layer. A method of manufacturing the flexible device array substrate is also provided.

Flexible device array substrate and manufacturing method of flexible device array substrate

A method of using a polishing system includes securing a wafer to a support, wherein the wafer has a first diameter. The method further includes polishing the wafer using a first polishing pad rotating about a first axis, wherein the first polishing pad has a second diameter greater than the first diameter. The method further includes rotating the support about a second axis perpendicular to the first axis after polishing the wafer using the first polishing pad. The method further includes polishing the wafer using a second polishing pad after rotating the support, wherein the second polishing pad has a third diameter less than the first diameter. The method further includes releasing the wafer from the support following polishing the wafer using the second polishing pad.

Method of using a polishing system

A display apparatus includes a substrate, an element layer, a protective film, a mechanical member, a first adhesive layer and a second adhesive layer. An opening of the protective film is located between a first portion of the protective film and a second portion of the protective film. The first portion of the protective film, the second portion of the protective film and the opening of the protective film are respectively overlapped with a first portion of the substrate, a second portion of the substrate and a third portion of the substrate. The first adhesive layer and the second adhesive layer are respectively disposed on a first surface and a second surface of the mechanical member. The third portion of the substrate is connected between the first portion of the substrate and the second portion of the substrate, and the third portion of the substrate is bent.

Display apparatus

A display, including a supporting layer and a flexible display panel, is provided. The supporting layer has at least two extending sections and at least one bending section, connected therebetween and adapted to be bent along an axis as a rotation axis. The supporting layer has at least one groove at the bending section and at least one indentation at a bottom surface of the groove. An extending direction of the groove is parallel to the axis. An extending direction of the indentation is not parallel to the axis. The supporting layer has a first thickness at each extending section, a second thickness at the groove, and a third thickness at the indentation. The first, second, and third thicknesses are different from one another. The flexible display is disposed on the supporting layer. The groove and the flexible display are respectively located on two opposite sides of the supporting layer.

A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Method for forming semiconductor device structure with etch stop layer

A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Growing community of inventors

Hsinchu, Taiwan

Chih-Tsung Lee