Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Chih-Ta Shen

Chen-Hua Douglas Yu

Wen-Chih Chiou

Szu-Wei Lu

Shang-Yun Hou

Chi-Hsi Wu

Ying-Ching Shih

Hsien-Pin Hu

Sao-Ling Chiu

Wen-Hsin Wei

Ping-Kang Huang

Wei-Chuan Chen

Kuei-Hung Shen

Shan-Yi Yang

Yung-Hung Wang

Cheng-Tying Yen

A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Giga interposer integration through Chip-On-Wafer-On-Substrate

Giga interposer integration through chip-on-wafer-on-substrate

A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.

Magnetic memory device

Growing community of inventors

Hsinchu, Taiwan

Chih-Ta Shen