Intel Corporation

Inficon Gmbh

Chih-shun Lu

Philip Allan Kraus

Kelvin Chan

Michael D Willwerth

Leonard Michael Tedeschi

Yaoling Pan

Ashish Goel

Patrick John Tae

Vijaykumar Krithivasan

Shimin Mao

Anantha Subramani

Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

Resonant process monitor

A two-chamber electron impact emission sensor effective for monitoring vapor flux of materials in the presence of interfering species is described. The sensor includes two independent electron excitation regions and one photodetector for monitoring emission from excited species from both chambers. Copper vapor flux from an evaporation source was accurately measured in the presence of interfering HO vapor, and Ga vapor flux from an evaporation source was accurately monitored in the presence of interfering COgas. The invention permits deposition rates to be monitored using electron-impact emission spectroscopy with significantly improved accuracy in the presence of interfering gases at high partial pressures.

Apparatus and method for measuring vapor flux density

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Los Altos, CA, United States of America

Chih-shun Lu