Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Sheng Li

Chi-Wen Liu

Hsin-Chieh Huang

Yen-Ming Chen

Dian-Hau Chen

Chih-Fan Huang

Hui-Chi Chen

Chih-Hung Lu

Chih-hung Lu

Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Semiconductor device having a metal pad and a protective layer for corrosion prevention due to exposure to halogen

Prevention of metal pad corrosion due to exposure to halogen

A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.

FinFET with sloped surface at interface between isolation structures and manufacturing method thereof

A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.

Semiconductor device and manufacturing method thereof

FinFET with sloped surface at interface between isolation structures

Method of forming FinFET device by adjusting etch selectivity of dielectric layer

Growing community of inventors

Hsinchu, Taiwan

Chih-Sheng Li