Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Shen Yang

Cheng-Yi Huang

Shou-Wen Kuo

Yen-Ji Chen

Po-Wen Chai

Yi-Shiung Chen

Chien-Hsiang Chen

Tien-Lu Lin

Tai-I Yang

Hsu-Shui Liu

Chao-Li Shih

Yen-Chen Liu

Cheng-Hao Yu

Fu-Zen Lin

Ching-Horng Chen

A gas tube, a gas supply system containing the same and a semiconductor manufacturing method using the same are provided. The gas tube includes a porous material body and a resistant sheath surrounding the porous material body. The porous material body has a hollow tube structure and an empty cavity inside the hollow tube structure. The porous material body is hydrophobic and has a plurality of pores therein. The resistant sheath is disposed on the porous material body and surrounds the porous material body. The resistant sheath includes a plurality of holes penetrating through the resistant sheath.

Gas tube, gas supply system and manufacturing method of semiconductor device using the same

A Faraday shield, a semiconductor processing apparatus, and an etching apparatus are provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.

Semiconductor processing apparatus for generating plasma

The disclosed techniques include a space filling device to be used with a wet bench in chemical replacement procedures. The space filling device has an overall density that is higher than the chemicals used to purge the wet bench. As such, when embedded into the wet bench, or more specifically, the chemical tank of the wet bench, the space filling device will occupy a portion of the interior volume space. As a result, less purging chemicals are used to fill and bath the wet bench.

Space filling device for wet bench

An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.

Apparatus and method for forming alignment marks

A semiconductor chuck is provided. The semiconductor chuck includes a metal base and a first adhesive layer over the metal base. The semiconductor chuck includes a dielectric layer over the first adhesive layer, wherein the dielectric layer is adhered to the metal base by the first adhesive layer. The semiconductor chuck includes a removable protective plate over the dielectric layer, wherein a first portion of the removable protective plate covers a top surface of the dielectric layer.

Semiconductor chuck and method of making

A wafer etching apparatus and a method for controlling an etch bath of a wafer is provided. The wafer etching apparatus includes an etching tank comprising an etch bath, an etch bath recycle system connected to the etching tank, a real time monitor (RTM) system connected to the etching tank, and a control system coupled with the RTM system and the etch bath recycle system. The wafer etching apparatus and the method for controlling an etch bath of the wafer both control the silicate concentration in the etch bath to stable an etching selectivity with respect to silicon oxide and silicon nitride.

Growing community of inventors

Yunlin County, Taiwan

Chih-Shen Yang