Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Piao Chuu

Lain-Jong Li

Ming-Yang Li

Tse-An Chen

Chao-Kai Wen

Wen-Hao Chang

ChienChih Tseng

A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.

Semiconductor device and method of manufacturing semiconductor device

A transistor includes a channel layer, a gate stack, and source/drain regions. The channel layer includes a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer. Orientations of the hBN flakes are substantially aligned. The gate stack is over the channel layer. The source/drain regions are aside the gate stack.

Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer

In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.

Field effect transistor using transition metal dichalcogenide and a method for forming the same

A method includes depositing a copper layer over a first substrate, annealing the copper layer, depositing a hexagonal boron nitride (hBN) film on the copper layer, and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate.

Growing community of inventors

Hsinchu, Taiwan

Chih-Piao Chuu