Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Nan Lo

Ming-Hsi Yeh

Hsin-Hsien Lu

Kuo-Bin Huang

Ming-Chi Huang

The present disclosure provides a method for fabricating a semiconductor structure, including forming a dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, increasing a thickness of the dielectric layer in the first region, including forming an oxygen capturing layer over the dielectric layer in the first region, including forming the oxygen capturing layer over the first region and the second region, and removing the oxygen capturing layer over the second region with a mask layer, performing an oxidizing operation from a top surface of the oxygen capturing layer to increase oxygen concentration of the oxygen capturing layer, removing the oxygen capturing layer over the first region, and forming a gate structure over the dielectric layer.

Semiconductor device and manufacturing method for the same

The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.

Growing community of inventors

Hsinchu, Taiwan

Chih-Nan Lo