Epistar Corporation

Chih-Nan Lin

Chao-Hsing Chen

Chien-Fu Shen

Jia-Kuen Wang

Yu-Chen Yang

Hong-Che Chen

Hui-Chun Yeh

Yi-Wen Ku

Hung-Che Chen

A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Electrode of light-emitting device

Light-emitting device

A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

Light-emitting device that provides efficient and bright luminescence

Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.

Growing community of inventors

Hsinchu, Taiwan

Chih-Nan Lin